Investigation of the agglomeration and amorphous transformation effects of neutron irradiation on the nanocrystalline silicon carbide (3C-SiC) using TEM and SEM …
EM Huseynov - Physica B: Condensed Matter, 2017 - Elsevier
Nanocrystalline 3C-SiC particles irradiated by neutron flux during 20 h in TRIGA Mark II light
water pool type research reactor. Silicon carbide nanoparticles were analyzed by Scanning …
water pool type research reactor. Silicon carbide nanoparticles were analyzed by Scanning …
[HTML][HTML] Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix
A Kole, P Chaudhuri - AIP Advances, 2014 - pubs.aip.org
A moderately low temperature (≤ 800 C) thermal processing technique has been described
for the growth of the silicon quantum dots (Si-QD) within microcrystalline silicon carbide (μc …
for the growth of the silicon quantum dots (Si-QD) within microcrystalline silicon carbide (μc …
Plasma engineering of silicon quantum dots and their properties through energy deposition and chemistry
BB Sahu, Y Yin, S Gauter, JG Han… - Physical Chemistry …, 2016 - pubs.rsc.org
The characterization of plasma and atomic radical parameters along with the energy influx
from plasma to the substrate during plasma enhanced chemical vapor deposition (PECVD) …
from plasma to the substrate during plasma enhanced chemical vapor deposition (PECVD) …
Controlled growth of nanocrystalline silicon within amorphous silicon carbide thin films
A Kole, P Chaudhuri - AIP Conference Proceedings, 2014 - pubs.aip.org
Controlled formation of nanocrystalline silicon (nc-Si) within hydrogenated amorphous
silicon carbide (a-SiC: H) thin films has been demonstrated by a rf (13.56 MHz) plasma …
silicon carbide (a-SiC: H) thin films has been demonstrated by a rf (13.56 MHz) plasma …
Electrical transport in transverse direction through silicon carbon alloy multilayers containing regular size silicon quantum dots
Electrical transport in the transverse direction has been studied through a series of
hydrogenated silicon carbon alloy multilayers (SiC-MLs) deposited by plasma enhanced …
hydrogenated silicon carbon alloy multilayers (SiC-MLs) deposited by plasma enhanced …
Analysis of the microstructure of silicon quantum dot superlattice embedded microcrystalline silicon carbide for solar cell application
We have recently demonstrated [1] pin structure diodes with the intrinsic (i) layers
comprising of periodic depositions of silicon quantum dot embedded microcrystalline silicon …
comprising of periodic depositions of silicon quantum dot embedded microcrystalline silicon …