AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
HC Wang, TE Hsieh, YC Lin, QH Luc… - IEEE Journal of the …, 2017 - ieeexplore.ieee.org
We demonstrate the electrical performances of AlGaN/GaN metal-insulator-semiconductor-
high electron mobility transistors (MIS-HEMTs) with high quality Al 2 O 3 gate dielectric …
high electron mobility transistors (MIS-HEMTs) with high quality Al 2 O 3 gate dielectric …
AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors with high on/off current ratio of over 5× 1010 achieved by ozone pretreatment and using …
H Tokuda, JT Asubar, M Kuzuhara - Japanese Journal of Applied …, 2016 - iopscience.iop.org
This letter describes DC characteristics of AlGaN/GaN metal–insulator–semiconductor high-
electron-mobility transistors (MIS-HEMTs) with Al 2 O 3 deposited by atomic layer deposition …
electron-mobility transistors (MIS-HEMTs) with Al 2 O 3 deposited by atomic layer deposition …
Post-deposition annealing effects on the insulator/semiconductor interfaces of Al2O3/AlGaN/GaN structures on Si substrates
T Kubo, M Miyoshi, T Egawa - Semiconductor Science and …, 2017 - iopscience.iop.org
The effects of post-deposition annealing (PDA) on Al 2 O 3/AlGaN interfaces fabricated by
atomic layer deposition (ALD) are studied by x-ray photoelectron spectroscopy (XPS) using …
atomic layer deposition (ALD) are studied by x-ray photoelectron spectroscopy (XPS) using …
Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate
T Kawaide, Y Kometani, S Tanaka, T Egawa… - Applied Physics …, 2024 - pubs.aip.org
A high-electron-mobility transistor (HEMT) structure consisting of a 15-nm-thick quaternary
AlGaInN top barrier layer, a thin 200-nm-thick unintentionally doped (UID) GaN channel …
AlGaInN top barrier layer, a thin 200-nm-thick unintentionally doped (UID) GaN channel …
DC and Pulse I–V Characteristics of Strain‐Engineered AlGaInN/GaN HEMTs fabricated on Single‐Crystal AlN Substrate
M Miyoshi, S Tanaka, T Kawaide, A Inoue… - … status solidi (a), 2023 - Wiley Online Library
A high‐electron‐mobility transistor (HEMT) structure consisting of a strain‐engineered
quaternary AlGaInN barrier layer on an unintentionally doped (UID) GaN channel layer is …
quaternary AlGaInN barrier layer on an unintentionally doped (UID) GaN channel layer is …
Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealing
T Kubo, T Egawa - Semiconductor Science and Technology, 2017 - iopscience.iop.org
Abstract HfO 2/AlGaN/GaN metal–insulator–semiconductor (MIS)-type high electron mobility
transistors (HEMTs) on Si substrates were fabricated by atomic layer deposition of HfO 2 …
transistors (HEMTs) on Si substrates were fabricated by atomic layer deposition of HfO 2 …
Analytical derivation of interface state density from sub-threshold swing in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors
H Tokuda, JT Asubar, M Kuzuhara - Japanese Journal of Applied …, 2017 - iopscience.iop.org
We present an analytical expression of sub-threshold swing (SS) in AlGaN/GaN metal–
insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs), and describe …
insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs), and describe …
Fabrication et caractérisation de transistors HEMT et de diodes à base de GaN pour la conversion de tension DC-DC en électronique de puissance
Q Fornasiero - 2022 - theses.hal.science
Ce travail de thèse s' inscrit dans une problématique constante d'intégrabilité des systèmes
électroniques à fortes densités de puissance et à haut rendement pour l'électronique de …
électroniques à fortes densités de puissance et à haut rendement pour l'électronique de …
[PDF][PDF] GaN Metal-Oxide-Semiconductor HEMTs: Selected Physical Aspects and Charac-terization
M Ťapajna, D Gregušová, J Kuzmík - academia.edu
A brief review of models describing current understanding of the charge distribution in metal-
oxide-semiconductor high-electron mobility transistor (MOSHEMT) structures is presented …
oxide-semiconductor high-electron mobility transistor (MOSHEMT) structures is presented …
[图书][B] Mechanistic Insight and Properties of Metal Oxide Thin Films Deposited Via Atomic Layer Deposition
B Peek - 2019 - search.proquest.com
Mechanistic Insight and Properties of Metal Oxide Thin Films Deposited via Atomic Layer
Deposition Page 1 Mechanistic Insight and Properties of Metal Oxide Thin Films Deposited …
Deposition Page 1 Mechanistic Insight and Properties of Metal Oxide Thin Films Deposited …