The semiconductor device comprises a pair of impurity diffused regions formed in a silicon
substrate 10, spaced from each other, and a gate electrode 26 formed above the silicon …

(57) ABSTRACT A polymer composition comprises:(a) a high molecular weight, branched
component; and (b) a low molecular weight, branched component. Some polymer …

A polymerization process comprises contacting one or more olefinic comonomers in the
presence of at least a high molecular weight catalyst and at least a low molecular weight …

US7300983B2 - High melt strength polymers and method of making same - Google Patents
US7300983B2 - High melt strength polymers and method of making same - Google Patents …

US PATENT DOCUMENTS 3,984,610 A 10, 1976 Elston 4,500,648 A 2/1985 Malpass
4,530.914 A 7, 1985 Ewen et al. 4,752,597 A 6, 1988 Turner 4,851,489 A 7/1989 Malpass …

Methods for controlling the grain Structure of a polycrys talline Si-containing film involve
depositing the film in Stages So that the morphology of a first film layer deposited in an initial …

US7271221B2 - Method of making interpolymers and products made therefrom - Google
Patents US7271221B2 - Method of making interpolymers and products made therefrom …

Chemical vapor deposition methods are used to deposit amorphous silicon-containing films
over various substrates. Such methods are useful in semiconductor manufacturing to …

Hydrogen ions (40) of high concentration are implanted into an amorphous silicon film (21).
By implantation of the hydrogen ions (40), a hydrogen-ion implantation layer (41) is formed …

Chemical vapor deposition processes utilize chemical precursors that allow for the
deposition of thin films to be conducted at or near the mass transport limited regime. The …