Superconducting Ga-overdoped Ge layers capped with SiO: Structural and transport investigations
J Fiedler, V Heera, R Skrotzki, T Herrmannsdörfer… - Physical Review B …, 2012 - APS
Superconducting Ga-rich layers in Ge are fabricated by Ga implantation through a thin SiO 2
cover layer. After annealing in a certain temperature window, Ga accumulation at the SiO …
cover layer. After annealing in a certain temperature window, Ga accumulation at the SiO …
Mixing in Au/Ge system induced by Ar+ ion irradiation
JM Nawash, NM Masoud, KA Al-Saleh… - Journal of materials …, 2007 - Springer
Abstract Rutherford Backscattering Spectrometry (RBS) and Electrical Resistivity
Measurements (ERM) were used to investigate the mixing of Au/Ge bilayer deposited onto …
Measurements (ERM) were used to investigate the mixing of Au/Ge bilayer deposited onto …
Study of interface mixing induced by Ar+ ion irradiation on Ag–Ge bilayer system
JM Nawash, NM Masoud, KA Al-Saleh, NS Saleh - Applied Physics A, 2009 - Springer
A 400 keV 40 Ar+ ion beam was utilized to induce mixing between two thin layers of Ag and
Ge. Rutherford Backscattering Spectrometry and Electrical Resistivity Measurements were …
Ge. Rutherford Backscattering Spectrometry and Electrical Resistivity Measurements were …
Ion beam induced atomic mixing kinetics of Te/Cu and Te/Ag
NS Saleh, IJ Jabr, KA Al-Saleh - … and Methods in Physics Research Section …, 1992 - Elsevier
Ion beam mixing, at room temperature, of Te/Cu and Te/Ag systems induced by 300 keV Kr+
irradiation are studied by means of ac electrical resistivity measurements and 2 MeV 4 He+ …
irradiation are studied by means of ac electrical resistivity measurements and 2 MeV 4 He+ …
Ion Beam Mixing of Sb/Glass Studied by Rutherford Backscattering Spectrometry
AS Belal - Arabian Journal for Science and Engineering, 2012 - Springer
Room temperature ion beam mixing of a Sb/glass system, induced by 300 keV collimated
Ar+ ion beams from the Jordan Van de Graff Accelerator, was studied by means of …
Ar+ ion beams from the Jordan Van de Graff Accelerator, was studied by means of …
Kinetics of ion beam mixing of the Te/Se system
NS Saleh, KA Al‐Saleh - physica status solidi (a), 1996 - Wiley Online Library
Bilayer thin films of the Te/Se system evaporated onto ap‐type Si wafer are irradiated at
room temperature using a 500 keV Ar+ beam. The resulting growth of an ion mixed layer at …
room temperature using a 500 keV Ar+ beam. The resulting growth of an ion mixed layer at …
Ion beam induced atomic transport in Pd/Ge system
KA Al-Saleh, NS Saleh - Nuclear Instruments and Methods in Physics …, 1996 - Elsevier
Bilayer system of Pd/Ge is irradiated at room temperature using a 400 keV Ar+ beam. The
evolution of the intermixed layer at the interface in this system is studied by Rutherford …
evolution of the intermixed layer at the interface in this system is studied by Rutherford …