theoretical and computational analysis of a wurtzite-AlGaN DUV-LED to mitigate quantum-confined Stark effect with a zincblende comparison considering Mg-and Be …
In this work, an AlGaN-based Deep-Ultraviolet Light-Emitting Diode structure has been
designed and simulated for the zincblende and wurtzite approaches, where the polarization …
designed and simulated for the zincblende and wurtzite approaches, where the polarization …
[HTML][HTML] Simultaneous effect of impurities, hydrostatic pressure, and applied potential on the optical absorptions in a GaAs field-effect transistor
H Dakhlaoui, M Nefzi - Results in Physics, 2019 - Elsevier
This work theoretically investigates the impact of structural parameters on energy levels and
optical absorption coefficients in an Si-delta doped GaAs field-effect transistor δ-FE T. The …
optical absorption coefficients in an Si-delta doped GaAs field-effect transistor δ-FE T. The …
[HTML][HTML] Theoretical study of electronic properties of resonant tunneling diodes based on double and triple AlGaAs barriers
S Almansour - Results in Physics, 2020 - Elsevier
In this paper, we investigated the effect of the central AlGaAs barrier width L b2 in a resonant
tunneling diode (RTD) composed by triple barriers on the current-voltage characteristics …
tunneling diode (RTD) composed by triple barriers on the current-voltage characteristics …
Strain effects in the absorption coefficient and relative refractive index change in double asymmetric AlxGa1− xN/GaN quantum wells
FM Nava-Maldonado, JG Rojas-Briseño… - Physica E: Low …, 2019 - Elsevier
We theoretically investigate the optical absorption and the relative change in the index of
refraction in asymmetric double zinc-blende Al x Ga 1− x N/GaN quantum wells. Particular …
refraction in asymmetric double zinc-blende Al x Ga 1− x N/GaN quantum wells. Particular …
Control of a resonant tunneling structure by intense laser fields
The intense laser field effects on a resonant tunneling structure were studied using
computational methods. The considered structure was a GaAs/In x Ga 1-x As/Al 0.3 Ga 0.7 …
computational methods. The considered structure was a GaAs/In x Ga 1-x As/Al 0.3 Ga 0.7 …
Electromodulation of the negative differential resistance in an AlGaAs/GaAs resonant tunneling diode
S Almansour, H Dakhlaoui - Journal of the Korean Physical Society, 2019 - Springer
In this work, we investigate the impact of the width of the AlGaAs right barrier and the doping
concentration in the contact layers on the negative differential resistance (NDR) and the …
concentration in the contact layers on the negative differential resistance (NDR) and the …
Quantum well width and barrier Thickness effects on the perpendicular transport in polar and non-polar oriented AlGaN/GaN Resonant Tunneling Diodes
N Kacem, A Bhouri, JL Lazzari… - 2021 IEEE International …, 2021 - ieeexplore.ieee.org
In this study, we theoretically investigated the electronic properties of resonant tunneling
diodes (RTDs) grown along the polar and non-polar orientations by using the self-consistent …
diodes (RTDs) grown along the polar and non-polar orientations by using the self-consistent …
Propiedades ópticas lineales y no lineales en pozos cuánticos dobles con alturas de barreras asimétricas en sistemas AlGaN/GaN zincblenda
FM Nava Maldonado - 2019 - 148.217.50.3
En esta investigación doctoral realizamos el cálculo del coeficiente de absorción y del
cambio relativo del índice de refracción lineal y su corrección no lineal, debida al efecto de …
cambio relativo del índice de refracción lineal y su corrección no lineal, debida al efecto de …