Review and analysis of SiC MOSFETs' ruggedness and reliability
J Wang, X Jiang - IET Power Electronics, 2020 - Wiley Online Library
SiC MOSFETs (silicon carbide metal‐oxide semiconductor field‐effect transistors) are
replacing Si insulated gate bipolar transistors in many power conversion applications due to …
replacing Si insulated gate bipolar transistors in many power conversion applications due to …
A review of power electronic devices for heavy goods vehicles electrification: Performance and reliability
This review explores the performance and reliability of power semiconductor devices
required to enable the electrification of heavy goods vehicles (HGVs). HGV electrification …
required to enable the electrification of heavy goods vehicles (HGVs). HGV electrification …
Investigations on the degradations of double-trench SiC power MOSFETs under repetitive avalanche stress
J Wei, S Liu, L Yang, L Tang, R Lou, T Li… - … on electron devices, 2018 - ieeexplore.ieee.org
The degradations of electrical parameters for double-trench silicon carbide (SiC) power
metal-oxidesemiconductor field-effect transistors (MOSFETs) under repetitive avalanche …
metal-oxidesemiconductor field-effect transistors (MOSFETs) under repetitive avalanche …
Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs Under Repetitive Avalanche Shocks
In this work, degradations of dynamic characteristics for silicon carbide (SiC) power metal-
oxide-semiconductor field-effect transistors under repetitive avalanche shocks are …
oxide-semiconductor field-effect transistors under repetitive avalanche shocks are …
Statistical analysis of the electrothermal imbalances of mismatched parallel SiC power MOSFETs
A Borghese, M Riccio, A Fayyaz… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
Thanks to the increasing availability of silicon carbide (SiC) metal oxide semiconductor field
effect transistors (MOSFETs) with outstanding static and dynamic performances, the number …
effect transistors (MOSFETs) with outstanding static and dynamic performances, the number …
Impact of negative gate bias and inductive load on the single-pulse avalanche capability of 1200-V SiC trench MOSFETs
In this study, the single-pulse avalanche capability of two types of 1.2-kV silicon carbide
(SiC) trench MOSFETs was investigated through unclamped inductive switching (UIS) …
(SiC) trench MOSFETs was investigated through unclamped inductive switching (UIS) …
Investigation on Surge Current Capability of 4H-SiC Trench-Gate MOSFETs in Third Quadrant Under Various VGS Biases
In this work, third-quadrant–characterization and surge current tests are carried out on SiC
asymmetric-trench MOSFET (DUT A) and SiC double-trench MOSFET (DUT B) under …
asymmetric-trench MOSFET (DUT A) and SiC double-trench MOSFET (DUT B) under …
Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage
In this study, the experimental evaluation and numerical analysis of short-circuit
mechanisms of 1200 V SiC planar and trench MOSFETs were conducted at various DC bus …
mechanisms of 1200 V SiC planar and trench MOSFETs were conducted at various DC bus …
Investigations of UIS failure mechanism in 1.2 kV trench SiC MOSFETs using electro-thermal-mechanical stress analysis
In this study, the avalanche capabilities of 1.2 kV trench SiC MOSFETs were investigated
using unclamped inductive switching tests at various negative gate biases, and electro …
using unclamped inductive switching tests at various negative gate biases, and electro …
Study on single-pulse UIS capability of SiC MOSFET with different P-base morphology
A Wang, Y Bai, C Li, Z Wu, Y Tang, X Tian… - Semiconductor …, 2022 - iopscience.iop.org
At present, the single-pulse unclamped inductive switching (UIS) characteristics of SiC
MOSFET have been fully studied. The current mainstream research suggests that the failure …
MOSFET have been fully studied. The current mainstream research suggests that the failure …