This work reports on high-performance enhancement-mode (E-mode) AlN/GaN Schottky
gate HEMT (AlN SGHEMT) for millimeter-wave applications. Utilizing an ultrathin 4-nm …

The nuclear transparency of charged hadrons produced in the (e, e′) reaction on nuclei
has been calculated using the Glauber model for the nuclear reaction. The color …

Silicon nitride (SiNx) is used for device passivation and capacitance dielectric in GaN
monolithic microwave integrated circuits. However, this is a conflicting requirement as …

Strain engineering has proven to be a useful technique for enhancing the performance of
many modern-day transistors. Stress engineering can also have a non-trivial effect on the …

GaN-based vertical superjunction high electron mobility transistors (HEMT) are recent
avenues for power transistors. In this work, an enhancement mode vertical superjunction …

The advent of novel materials for manufacturing and the inherent constraints of nanoscale
devices, which lead to an increase in the unpredictability of device characteristics, pose …

Strain engineering has proved to be useful for enhancing the performance of AlGaN/GaN
HEMT devices. The device transfer characteristics are significantly affected by proper …

The double-hetero GaN/AlGaN/GaN polarization junction (PJ) is a semiconductor structure
designed to enhance the performance of RF (Radio Frequency) and power devices …