Ultrathin (In, Mg) films on Si (111): A nearly freestanding double-layer metal
S Terakawa, S Hatta, H Okuyama, T Aruga - Physical Review B, 2022 - APS
We report on the formation of triple-atomic-layer metal films on Si (111) by deposition of Mg
onto In double-layer films. The deposited Mg atoms are intercalated between the In layers …
onto In double-layer films. The deposited Mg atoms are intercalated between the In layers …
Structural and electronic properties of C60 fullerene network self-assembled on metal-covered semiconductor surfaces
AN Mihalyuk, TV Utas, SV Eremeev… - The Journal of …, 2021 - pubs.aip.org
Using first-principles density functional theory calculations, we made an accurate structural
characterization of the C 60 superstructures self-assembled on the Tl-adsorbed Si (111) and …
characterization of the C 60 superstructures self-assembled on the Tl-adsorbed Si (111) and …
From C60 “trilliumons” to “trilliumenes:” Self-assembly of 2D fullerene nanostructures on metal-covered silicon and germanium
AV Zotov, DA Olyanich, VV Mararov, TV Utas… - The Journal of …, 2018 - pubs.aip.org
We discovered a set of C 60 nanostructures that appear to be constructed using a universal
building block made of four C 60 molecules on Si (111) or Ge (111) surfaces covered by an …
building block made of four C 60 molecules on Si (111) or Ge (111) surfaces covered by an …
Double-atomic-layer Tl-Mg compound on a Si (111) surface with advanced electronic properties
AY Tupchaya, LV Bondarenko, YE Vekovshinin… - Physical Review B, 2020 - APS
We report on the formation and comprehensive study of atomic and electronic structures of a
new Tl-Mg two-dimensional compound reconstruction with 3× 3 periodicity on a Si (111) …
new Tl-Mg two-dimensional compound reconstruction with 3× 3 periodicity on a Si (111) …
Исследование электрического сопротивления пленок галлия на реконструированной поверхности Si (111)
ДА Цуканов, МВ Рыжкова - Журнал технической физики, 2024 - mathnet.ru
Представлены результаты исследования кристаллической структуры и электрического
сопротивления подложек кремния Si (111) после осаждения галлия на предварительно …
сопротивления подложек кремния Si (111) после осаждения галлия на предварительно …
Local electronic structure of doping defects on Tl/Si (111) 1x1
B Pieczyrak, L Jurczyszyn, P Sobotík, I Ošt'ádal… - SCientifiC …, 2019 - nature.com
Abstract The Tl/Si (111) 1× 1 surface is a representative of a 2D layer with Rashba-type spin-
split electronic bands. To utilize the spin polarization, doping of the system should be …
split electronic bands. To utilize the spin polarization, doping of the system should be …
Adsorption of S on Si (111) with M4× 4 superstructure
The atomic and electronic structures are calculated for the M 4× 4 superstructure of S/Si
(111), which was recently identified by Schmidt et al.[Surf. Sci. 694 (2020) 121561] by using …
(111), which was recently identified by Schmidt et al.[Surf. Sci. 694 (2020) 121561] by using …
Studying the surface conductivity of a thallium bilayer on Si (111) substrate after adsorption of lithium and rubidium
MV Ryzhkova, EA Borisenkoa, MV Ivanchenko… - Technical Physics …, 2018 - Springer
Abstract Changes in the state of a thallium bilayer on Si (111) substrate, Si (111) 6× 6–Tl,
after adsorption of lithium and rubidium were studied using low-energy electron-diffraction …
after adsorption of lithium and rubidium were studied using low-energy electron-diffraction …
Tl on the Si (111)-surface: Density Functional Theory
The atomic geometry and electronic structure of a single and double-layer of Thallium (Tl) on
the Si (111)-(7× 3) surface have been studied using density functional theory. For Tl layer …
the Si (111)-(7× 3) surface have been studied using density functional theory. For Tl layer …
Electrical Conductivity Study of the Adsorbate-Induced Si(111) Surface Reconstructions after C60 Adsorption
DA Tsukanov, MV Ryzhkova - Solid State Phenomena, 2020 - Trans Tech Publ
Electrical conductance of Si (111) 6× 6-Tl and Si (111) β√ 3×√ 3-Bi surfaces has been
monitored in the course of fullerenes deposition. It has been found that dependence of …
monitored in the course of fullerenes deposition. It has been found that dependence of …