According to one embodiment, it includes a stacked body including N-number of layers (N is
an integer of 2 or more) stacked on a semiconductor substrate, opening portions penetrating …

A semiconductor device includes a substrate having first and second regions, a gate
electrode stack having a plurality of gate electrodes vertically stacked and spaced apart from …

(57) ABSTRACT A method of manufacturing a semiconductor device may include forming a
first stack structure by alternately stacking first material layers and second material layers …

A semiconductor device including: a substrate including a top surface configured to extend
in a first direction and a second direction that are perpendicular to each other; gate stack …

A non-volatile memory includes a substrate, a stacked structure, a channel layer, and a
second dielectric layer. The stacked structure includes a first dielectric layer and a plurality of …

Provided is a semiconductor memory device. The semicon ductor memory device includes a
peripheral circuit gate pattern on a first substrate, an impurity region in the first substrate and …

An integrated circuit (IC) device includes: a channel region that extends on the substrate to
penetrate a plurality of word lines; a bit line contact pad that contacts an upper surface of the …

(57) ABSTRACT A semiconductor memory device includes first conductive layers stacked on
a substrate; second conductive layers stacked on the substrate and apart from the first …

Various embodiments disclose a 3D memory device, including a substrate; a plurality of
conductor layers disposed on the substrate; a plurality of NAND strings disposed on the …

A vertical memory device includes gate electrode structures, channels, first to third division
patterns, and a first support layer. The gate electrode structure includes gate electrodes …