Group-III-nitride semiconductors, including AlN, GaN, InN and their ternary, quaternary
compounds, are promising electronic and optoelectronic materials for the applications in …

Silicon does not emit light efficiently, therefore the integration of other light‐emitting
materials is highly demanded for silicon photonic integrated circuits. A number of integration …

In this study, single crystal ZnO microwires (MW) with size of∼ 5.4 mm× 30 μm are prepared
through a chemical vapor deposition technique at high temperature (1200° C) …

Ultraviolet laser radiation has been adopted in a wide range of applications as diverse as
water purification, flexible displays, data storage, sterilization, diagnosis and bioagent …

Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

Multicolor single InGaN/GaN dot-in-nanowire light emitting diodes (LEDs) were fabricated
on the same substrate using selective area epitaxy. It is observed that the structural and …

Semiconductor nanowire lasers are promising as ultrasmall, highly efficient coherent light
emitters in the fields of nanophotonics, nano-optics and nanobiotechnology,. Although there …

Group-III nitrides and their alloys feature direct bandgaps covering a broad range of the
electromagnetic spectrum, making them a promising material system for various …

We report lasing from nonpolar pin InGaN/GaN multi-quantum well core–shell single-
nanowire lasers by optical pumping at room temperature. The nanowire lasers were …