In this review the effect of the growth process on the formation of defects in the hetero-
epitaxial 3C-SiC film and the possible path for defects reduction has been reported. In our …

A microscopic model for the formation of annealing twins in fcc crystals is proposed. It is
argued that Shockley partial loops nucleate on consecutive {111} planes by growth …

Systematically discusses the growth method, material properties, and applications for key
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …

The nucleation mechanisms for SiC thin films on Si were investigated by interrupting the
growth at very brief times (-i to i0 s) using rapid thermal chemical vapor deposition in …

In this paper we report on the growth of pseudomorphically strained Si1− xGex alloys on<
001> Si by solid phase epitaxy. One set of amorphous alloys was formed by high dose ion …

Direct integration of III–V semiconductor light sources on silicon is an essential step toward
the development of portable, on-chip infrared sensor systems. Driven by the presence of …

The microstructure of GaN templates and epitaxial lateral overgrown (ELO) films deposited
on M-plane sapphire is investigated by transmission electron microscopy. The epitaxial …

Continuous, ultrathin silicon carbide (SiC) films of less than 10 nm have been grown on Si
by rapid thermal chemical vapor deposition carbonization with high propane flow rates at …

A series of five short-period (InAs) &4lSb), superlattices, grown either with ALAS-like, InSb-
like, or alternating interfaces, were studied by means of x-ray diffraction, high resolution …

The defect structures in semipolar ()-GaN, AlN layers grown on m-sapphire by metal organic
vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) are characterized by …