Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …

Breakdown voltage (BV) is arguably one of the most critical parameters for power devices.
While avalanche breakdown is prevailing in silicon and silicon carbide devices, it is lacking …

GaN high electron mobility transistors (HEMTs) have limited avalanche capability and
usually fail catastrophically in voltage overshoot up to their dynamic breakdown voltage (BV …

Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …

This article investigates the ruggedness of the GaN high electron mobility transistor (HEMT),
a power device without avalanche capability, in continuous, high-frequency, overvoltage …

In order to overcome the challenge of balancing accuracy with simulation speed of power
electronics converters for system-level simulation, the paper proposes a GaN power …

The reaction between gallium (Ga) and silicon (Si), termed melt-back etching, greatly
deteriorates the quality of GaN grown on a Si substrate. In this paper, the mechanism of melt …

Highly stable threshold voltage characteristics are an essential reliability requirement for p-
GaN/AlGaN/GaN high-electron-mobility transistors (p-GaN HEMTs) to withstand various gate …

In this letter, high-performance 4H-SiC junction barrier Schottky diodes with state-of-art
single-pulse avalanche energy density by adopting recessed anode and termination regions …

In this letter, the unclamped-inductive-switching (UIS) behaviors of GaN-based high-electron-
mobility transistors with p-type GaN gate (p-GaN HEMTs) at cryogenic temperature (CT) are …