Review of noise sources in magnetic tunnel junction sensors
ZQ Lei, GJ Li, WF Egelhoff, PT Lai… - IEEE Transactions on …, 2011 - ieeexplore.ieee.org
Noise problem limits the sensitivity of magnetic tunnel junction (MTJ) sensors for ultra-low
magnetic field applications. Noise analysis not only helps in finding ways to eliminate noise …
magnetic field applications. Noise analysis not only helps in finding ways to eliminate noise …
Magnetoresistive sensor development roadmap (non-recording applications)
C Zheng, K Zhu, SC De Freitas… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
Magnetoresistive (MR) sensors have been identified as promising candidates for the
development of high-performance magnetometers due to their high sensitivity, low cost, low …
development of high-performance magnetometers due to their high sensitivity, low cost, low …
Shot noise in magnetic tunnel junctions: Evidence for sequential tunneling
We report the experimental observation of sub-Poissonian shot noise in single magnetic
tunnel junctions, indicating the importance of tunneling via impurity levels inside the tunnel …
tunnel junctions, indicating the importance of tunneling via impurity levels inside the tunnel …
1∕ f noise in magnetic tunnel junctions with MgO tunnel barriers
Electrical noise measurements are reported for magnetic tunnel junctions having
magnesium oxide tunnel barriers. These junctions have resistance-area products (RAPs) of …
magnesium oxide tunnel barriers. These junctions have resistance-area products (RAPs) of …
Comparison of sensitivity and low-frequency noise contributions in giant-magnetoresistive and tunneling-magnetoresistive spin-valve sensors with a vortex-state free …
H Weitensfelder, H Brueckl, A Satz, K Pruegl… - Physical Review …, 2018 - APS
Magnetoresistive spin-valve sensors based on the giant-magnetoresisitive (GMR) and
tunneling-magnetoresisitive (TMR) effect with a flux-closed vortex-state free-layer design are …
tunneling-magnetoresisitive (TMR) effect with a flux-closed vortex-state free-layer design are …
High bias voltage effect on spin-dependent conductivity and shot noise in carbon-doped Fe (001)∕ MgO (001)∕ Fe (001) magnetic tunnel junctions
R Guerrero, D Herranz, FG Aliev, F Greullet… - Applied Physics …, 2007 - pubs.aip.org
Low temperature (10 K) high voltage bias dynamic conductivity (up to 2.7 V) and shot
noise (up to 1 V) were studied in epitaxial Fe (100)∕ Fe–C∕ Mg O (100)∕ Fe (100) …
noise (up to 1 V) were studied in epitaxial Fe (100)∕ Fe–C∕ Mg O (100)∕ Fe (100) …
Very low 1∕ f noise at room temperature in fully epitaxial Fe∕ MgO∕ Fe magnetic tunnel junctions
FG Aliev, R Guerrero, D Herranz, R Villar… - Applied physics …, 2007 - pubs.aip.org
We report on room temperature 1∕ f noise in fully epitaxial Fe (45 nm)∕ Mg O (2.6 nm)∕
Fe (10 nm) magnetic tunnel junctions (MTJs) with and without carbon doping of the Fe∕ Mg …
Fe (10 nm) magnetic tunnel junctions (MTJs) with and without carbon doping of the Fe∕ Mg …
Low-frequency and shot noises in CoFeB/MgO/CoFeB magnetic tunneling junctions
The low-frequency and shot noises in spin-valve CoFeB/MgO/CoFeB magnetic tunneling
junctions were studied at low temperature. The measured 1/f noise around the magnetic …
junctions were studied at low temperature. The measured 1/f noise around the magnetic …
Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions
We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunneling junctions
with a high tunneling magnetoresistance ratio (over 200% at 3 K). Although the Fano factor …
with a high tunneling magnetoresistance ratio (over 200% at 3 K). Although the Fano factor …
Nonlinear conductance in nanoscale CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis
Magnetic tunnel junctions (MTJ) exhibit spin-dependent conductance that governs their
performance in various applications. While the transport characteristics are known to show …
performance in various applications. While the transport characteristics are known to show …