This paper presents a critical and detailed overview of experimental techniques for the
extraction of the thermal resistance of bipolar transistors from simple DC current/voltage …

" Extreme environments" represents an important niche market for electronics and spans the
operation of electronic components in surroundings lying outside the domain of …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

Many different methods have been proposed in the literature for the extraction of the thermal
resistance of heterojunction bipolar transistors (HBTs). This review presents a detailed …

This paper reports on SiGe NPN HBTs with unity gain cutoff frequency (f T) of 207 GHz and
an f max extrapolated from Mason's unilateral gain of 285 GHz. f max extrapolated from …

The relatively less exploited terahertz band possesses great potential for a variety of
important applications, including communication applications that would benefit from the …

This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS
technologies. The technologies provide high-performance SiGe heterojunction bipolar …

Scaling has been the principal driving force behind the successful technology innovations of
the past half-century. This paper investigates the impacts of scaling on SiGe heterojunction …

The current level in the modern high-speed SiGe heterojunction bipolar transistors (HBTs)
continues to increase for operation speed enhancement, but the resultant self-heating and …

A measurement system comprised of an ultra-low-distortion function generator, lock-in
amplifier, and semiconductor parameter analyzer is used for sensitive extraction of the small …