H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic
radiation of shorter wavelength or corpuscular radiation and specially adapted either for the …

Embodiments of the invention generally relate to the field of semiconductor devices, and
more specifically to fin-based junction diodes. A portion of a doped semiconductor fin may …

H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic
radiation of shorter wavelength or corpuscular radiation and specially adapted either for the …

5,966,532 A 10/1999 McDonald et al. 2003/0233374. Al 12/2003 Spinola et al. 6,014,670 A
1/2000 Zamanian et al. 2003/0236788 A1 12/2003 Kanellos et al. 6,043,746 A 3, 2000 …

An optoelectronic device, including a semiconductor body having a surface to receive
photons and a plurality of doped regions of opposite doping polarities, the doped regions …

US7525170B2 - Pillar Pin semiconductor diodes - Google Patents US7525170B2 - Pillar Pin
semiconductor diodes - Google Patents Pillar Pin semiconductor diodes Download PDF Info …

An LED is provided to include: a first conductive type semiconductor layer, an active layer
positioned over the first conductive type semiconductor layer, a second conductive type …

H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state
components formed in or on a common substrate including semiconductor components …

Trench lateral pin photodiodes are Semiconductor devices including one or more
photodiodes each of which comprises a Sandwich of an anode, an intrinsic region and a …

Surface of a reflective metal layer has a predetermined angle, and occurrence of cracks in a
conductive barrier layer formed on the reflective metal layer can be prevented. Also, an LED …