Microstructure enhanced absorption photosensitive devices
H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic
radiation of shorter wavelength or corpuscular radiation and specially adapted either for the …
radiation of shorter wavelength or corpuscular radiation and specially adapted either for the …
Fin PIN diode
K Cheng, LLC Hsu, JA Mandelman - US Patent 7,560,784, 2009 - Google Patents
Embodiments of the invention generally relate to the field of semiconductor devices, and
more specifically to fin-based junction diodes. A portion of a doped semiconductor fin may …
more specifically to fin-based junction diodes. A portion of a doped semiconductor fin may …
Microstructure enhanced absorption photosensitive devices
SY Wang, SP Wang - US Patent 10,700,225, 2020 - Google Patents
H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic
radiation of shorter wavelength or corpuscular radiation and specially adapted either for the …
radiation of shorter wavelength or corpuscular radiation and specially adapted either for the …
Generating code for an integrated data system
Q Jin, H Liao, SK Padmanabhan, L Xu - US Patent 9,727,604, 2017 - Google Patents
5,966,532 A 10/1999 McDonald et al. 2003/0233374. Al 12/2003 Spinola et al. 6,014,670 A
1/2000 Zamanian et al. 2003/0236788 A1 12/2003 Kanellos et al. 6,043,746 A 3, 2000 …
1/2000 Zamanian et al. 2003/0236788 A1 12/2003 Kanellos et al. 6,043,746 A 3, 2000 …
Optoelectronic device with lateral pin or pin junction
PB Atanackovic, SG Duvall - US Patent 8,962,376, 2015 - Google Patents
An optoelectronic device, including a semiconductor body having a surface to receive
photons and a plurality of doped regions of opposite doping polarities, the doped regions …
photons and a plurality of doped regions of opposite doping polarities, the doped regions …
Pillar Pin semiconductor diodes
LLC Hsu, JA Mandelman, K Cheng - US Patent 7,525,170, 2009 - Google Patents
US7525170B2 - Pillar Pin semiconductor diodes - Google Patents US7525170B2 - Pillar Pin
semiconductor diodes - Google Patents Pillar Pin semiconductor diodes Download PDF Info …
semiconductor diodes - Google Patents Pillar Pin semiconductor diodes Download PDF Info …
Light emitting diode module for surface mount technology and method of manufacturing the same
JH Chae, JM Jang, WY Roh, DW Suh… - US Patent …, 2016 - Google Patents
An LED is provided to include: a first conductive type semiconductor layer, an active layer
positioned over the first conductive type semiconductor layer, a second conductive type …
positioned over the first conductive type semiconductor layer, a second conductive type …
Microstructure enhanced absorption photosensitive devices
SY Wang, SP Wang - US Patent 11,121,271, 2021 - Google Patents
H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state
components formed in or on a common substrate including semiconductor components …
components formed in or on a common substrate including semiconductor components …
Trench optical device
K Cheng, R Divakaruni, CJ Radens - US Patent 6,943,409, 2005 - Google Patents
Trench lateral pin photodiodes are Semiconductor devices including one or more
photodiodes each of which comprises a Sandwich of an anode, an intrinsic region and a …
photodiodes each of which comprises a Sandwich of an anode, an intrinsic region and a …
Light emitting diode module for surface mount technology and method of manufacturing the same
JH Chae, JM Jang, WY Roh, DW Suh… - US Patent …, 2016 - Google Patents
Surface of a reflective metal layer has a predetermined angle, and occurrence of cracks in a
conductive barrier layer formed on the reflective metal layer can be prevented. Also, an LED …
conductive barrier layer formed on the reflective metal layer can be prevented. Also, an LED …