ABSTRACT PCMs are Non-Volatile Memories (NVMs) that store data using phase-change
semiconductors, such as silicon-chalcogenide glass. In addition to increased integration …

DRAM technology scaling has the undesirable side effect of degrading cell reliability. One
such concern of deeply scaled DRAMs is the increased coupling between adjacent cells …

New byte-addressable non-volatile memory (BNVM) technologies such as phase change
memory (PCM) enable the construction of systems with large persistent memories …

Designing reliable systems using scaled Spin-Transfer Torque Random Access Memory
(STT-RAM) has become a significant challenge as the memory technology feature size is …

DRAM cells in deeply scaled CMOS confront significant challenges to ensure reliable
operation. Parasitic capacitances induced by certain bit storage patterns, or bad patterns …

Emerging non-volatile memories have many advantages over conventional memory.
Unfortunately, many are susceptible to write endurance challenges, resulting in stuck-at …

Driven by the trends of emerging technologies in on-chip memories, with increasing the size
of last-level caches (LLCs), spin-transfer torque magnetic random access memories (STT …

The advent of byte-addressable non-volatile memory technologies such as phase change
memory (PCM) has spurred a flurry of research on topics including consistency and …

Phase change memory (PCM) has recently emerged as a promising technology to meet the
fast growing demand for large capacity memory in computer systems, replacing DRAM that …

Phase-change memory (PCM) and resistive memory (RRAM) are promising alternatives to
traditional memory technologies. However, both PCM and RRAM suffer from limited write …