A tutorial review on the modulation-doped field-effect transistor (MODFET) and its
application to ultra-low-noise, medium-power, and ultra-wide-band traveling-wave amplifiers …

This paper presents an accurate quasi-physical compact large-signal model for GaN high
electron mobility transistors (HEMTs). The drain current I ds expression is acquired by …

The compact model plays a pivotal role as a critical link between device fabrication and
circuit design. While conventional compact model theories and techniques are generally …

A model is presented that clarifies the role of inefficient charge modulation in limiting the
current-gain cutoff frequency (f/sub T/) of conventional GaAs/AlGaAs and pseudomorphic …

Theoretical and experimental work for the DC and RF performance of depletion mode Al/sub
0.3/Ga/sub 0.7/As/GaAs HEMTs under optical illumination is presented. The …

A simple and compact non‐linear analytical charge control model for the AlmGa1− mN/GaN
MODFET is developed. This model incorporates the effect of parasitic resistances Rs and …

We propose a new symmetrical heterojunction FET (HFET)/MESFET model to predict
intermodulation distortion in amplifiers and resistive mixers. The model is symmetric. That is …

We experimentally investigate the large-signal radio frequency performances of surface-
channel p-type diamond MESFETs fabricated on hydrogenated polycrystalline diamond …

A fully analytical model for the current-voltage (IV) characteristics of HEMT's is presented. It
uses a polynomial expression to model the dependence of sheet carrier concentration …

A new ac MODFET model including distributed effects is presented. We have solved the
wave equation of the MODFET, which automatically accounts for the propagation delay …