Charge Transfer Characterization of ALD-Grown TiO2 Protective Layers in Silicon Photocathodes
A critical parameter for the implementation of standard high-efficiency photovoltaic absorber
materials for photoelectrochemical water splitting is its proper protection from chemical …
materials for photoelectrochemical water splitting is its proper protection from chemical …
Resistive switching in microscale anodic titanium dioxide-based memristors
The potentiality of anodic TiO 2 as an oxide material for the realization of resistive switching
memory cells has been explored in this paper. Cu/anodic-TiO 2/Ti memristors of different …
memory cells has been explored in this paper. Cu/anodic-TiO 2/Ti memristors of different …
Low-Power Forming Free TiO2–x/HfO2–y/TiO2–x-Trilayer RRAM Devices Exhibiting Synaptic Property Characteristics
P Bousoulas, I Michelakaki, E Skotadis… - … on Electron Devices, 2017 - ieeexplore.ieee.org
The insertion of an HfO 2-y layer within TiO 2-x/HfO 2-y/TiO 2-x resistive random access
memory (RRAM) yields in low set power of 50 nW (10 nA at 5 V), low reset power of 3 nW (1 …
memory (RRAM) yields in low set power of 50 nW (10 nA at 5 V), low reset power of 3 nW (1 …
Enhancing the synaptic properties of low-power and forming-free HfOx/TaOy/HfOx resistive switching devices
D Sakellaropoulos, P Bousoulas, G Nikas… - Microelectronic …, 2020 - Elsevier
The incorporation of a TaO y layer in a HfO x/TaO y/HfO x resistive switching memory stack
results in low-power (~ nW in pulsing mode) and forming-free operation. With this material …
results in low-power (~ nW in pulsing mode) and forming-free operation. With this material …
Engineering amorphous-crystalline interfaces in TiO2− x/TiO2− y-based bilayer structures for enhanced resistive switching and synaptic properties
P Bousoulas, P Asenov, I Karageorgiou… - Journal of Applied …, 2016 - pubs.aip.org
The operating principle of resistive random access memories (RRAMs) relies on the
distribution of ionic species and their influence on the electron transport. Taking into account …
distribution of ionic species and their influence on the electron transport. Taking into account …
Factors determining the resistive switching behavior of transparent InGaZnO‐Based memristors
The overarching goal herein is to identify the factors dominating the performance of a‐IGZO‐
based memristors. Despite the highest on/off ratio, greater than 104 with a preferred minimal …
based memristors. Despite the highest on/off ratio, greater than 104 with a preferred minimal …
[HTML][HTML] Conduction mechanisms at distinct resistive levels of Pt/TiO2-x/Pt memristors
Resistive random access memories (RRAMs) are considered as key enabling components
for a variety of emerging applications due to their capacity to support multiple resistive …
for a variety of emerging applications due to their capacity to support multiple resistive …
Investigating the origins of high multilevel resistive switching in forming free Ti/TiO2− x-based memory devices through experiments and simulations
Although multilevel capability is probably the most important property of resistive random
access memory (RRAM) technology, it is vulnerable to reliability issues due to the stochastic …
access memory (RRAM) technology, it is vulnerable to reliability issues due to the stochastic …
High Thermal Conductive Crystalline Organohalide for Endurable Resistive Switching Non‐Volatile Memory
The organic‐based memristive devices are widely studied as a next‐generation electronics
for eco‐friendly wearable applications, thanks to materialsflexibility and biocompatibility …
for eco‐friendly wearable applications, thanks to materialsflexibility and biocompatibility …
Understanding the fundamentals of TiO2 surfaces. Part I. The influence of defect states on the correlation between crystallographic structure, electronic structure and …
O Berger - Surface Engineering, 2022 - Taylor & Francis
TiO2 is an important material for reasons that are related to fundamental research, as well as
to existing and potential technological applications. There is no aspect of the chemistry and …
to existing and potential technological applications. There is no aspect of the chemistry and …