Transistor engineering based on 2D materials in the post-silicon era
The miniaturization of metal–oxide–semiconductor field-effect transistors (MOSFETs) has
been the driving force behind the development of integrated circuits over the past 60 years; …
been the driving force behind the development of integrated circuits over the past 60 years; …
Process of Au-free source/drain ohmic contact to AlGaN/GaN HEMT
LQ Zhang, XL Wu, WQ Miao, ZY Wu, Q Xing, PF Wang - Crystals, 2022 - mdpi.com
AlGaN/GaN high electron mobility transistors (HEMTs) are regarded as promising
candidates for a 5G communication system, which demands higher frequency and power …
candidates for a 5G communication system, which demands higher frequency and power …
Controlling L-BTBT and volume depletion in nanowire JLFETs using core–shell architecture
In this paper, we propose the use of ap+ core in the core-shell nanowire (CS NW)
architecture to significantly reduce the gate induced drain leakage and therefore, increase …
architecture to significantly reduce the gate induced drain leakage and therefore, increase …
Controlling BTBT-induced parasitic BJT action in junctionless FETs using a hybrid channel
In this brief, we demonstrate for the first time that the presence of a hybrid channel, which
consists of ap+ layer below the n+ active device layer in a junctionless (JL) FET, leads to a …
consists of ap+ layer below the n+ active device layer in a junctionless (JL) FET, leads to a …
High-performance a-IGZO TFT fabricated with ultralow thermal budget via microwave annealing
T Pi, D Xiao, H Yang, G He, X Wu, W Liu… - … on Electron Devices, 2021 - ieeexplore.ieee.org
In this work, we report high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-
film transistors (TFTs) with atomic layer deposited Al 2 O 3 dielectric processed at a minimal …
film transistors (TFTs) with atomic layer deposited Al 2 O 3 dielectric processed at a minimal …
Low energy ion-solid interactions: A quantitative experimental verification of binary collision approximation simulations
H Hofsäss, F Junge, P Kirscht… - Materials Research …, 2023 - iopscience.iop.org
Ultra-low energy ion implantation has become an attractive method for doping of two-
dimensional materials and ultra-thin films. The new dynamic Monte Carlo program …
dimensional materials and ultra-thin films. The new dynamic Monte Carlo program …
Impacts of the shell doping profile on the electrical characteristics of junctionless FETs
MPV Kumar, CY Hu, KH Kao, YJ Lee… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
This paper presents the impacts of an advanced shell doping profile (SDP) on the electrical
characteristics of a junctionless (JL) FET in terms of OFF-current, subthreshold swing (SS) …
characteristics of a junctionless (JL) FET in terms of OFF-current, subthreshold swing (SS) …
Low temperature defect passivation technology for semiconductor electronic devices—Supercritical fluids treatment process
Currently, defects existing in materials and at the interface are the main bottlenecks limiting
the manufacture of high-performance electron devices, especially semiconductor devices …
the manufacture of high-performance electron devices, especially semiconductor devices …
1T-DRAM with shell-doped architecture
MHR Ansari, N Navlakha, JT Lin… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
This paper reports on the usefulness of shell-doped (SD) junctionless (JL) transistor
architecture for operation as capacitorless dynamic random-access memory (1T-DRAM). SD …
architecture for operation as capacitorless dynamic random-access memory (1T-DRAM). SD …
Impact of channel doping engineering on the high-frequency noise performance of junctionless In0. 3Ga0. 7As/GaAs FET: a numerical simulation study
In this paper, the channel doping engineering is proposed to improve the benchmarking
parameters of the analog/radio frequency and the high frequency noise performance of the …
parameters of the analog/radio frequency and the high frequency noise performance of the …