[HTML][HTML] Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources
A Acharyya, JP Banerjee - Applied Nanoscience, 2014 - Springer
In this paper the potentiality of impact avalanche transit time (IMPATT) devices based on
different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN (Wz …
different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN (Wz …
Potentiality of IMPATT devices as terahertz source: an avalanche response time-based approach to determine the upper cut-off frequency limits
A Acharyya, JP Banerjee - IETE Journal of Research, 2013 - Taylor & Francis
Abstract Potentiality of Impact Avalanche Transit Time (IMPATT) devices based on different
semiconductor materials such as InP, 4H-SiC, and Wurtzite-GaN (Wz-GaN) has been …
semiconductor materials such as InP, 4H-SiC, and Wurtzite-GaN (Wz-GaN) has been …
Prospects of 4H‐SiC Double Drift Region IMPATT Device as a Photo‐Sensitive High‐Power Source at 0.7 Terahertz Frequency Regime
M Mukherjee, N Mazumder… - Active and Passive …, 2008 - Wiley Online Library
The dynamic performance of wide‐bandgap 4H‐SiC based double drift region (p++ pnn++)
IMPATT diode is simulated for the first time at terahertz frequency (0.7 Terahertz) region. The …
IMPATT diode is simulated for the first time at terahertz frequency (0.7 Terahertz) region. The …
Quantum corrected drift-diffusion model for terahertz IMPATTs based on different semiconductors
A Acharyya, J Goswami, S Banerjee… - Journal of Computational …, 2015 - Springer
The authors have developed a quantum corrected drift-diffusion model for impact avalanche
transit time (IMPATT) devices by coupling the density gradient model with the classical drift …
transit time (IMPATT) devices by coupling the density gradient model with the classical drift …
[PDF][PDF] Optical control of millimeter-wave lateral double-drift region silicon IMPATT device
A Acharyya, S Banerjee, JP Banerjee - Radioengineering, 2012 - radioeng.cz
The effect of optical illumination on lateral Double-Drift Region (DDR) structure of Silicon
Impact Avalanche Transit Time (IMPATT) device is investigated in this paper. The device is …
Impact Avalanche Transit Time (IMPATT) device is investigated in this paper. The device is …
Thz solid-state source based on impatt devices
S Banerjee - Terahertz Biomedical and Healthcare Technologies, 2020 - Elsevier
In recent years, a lot of research interest has been generated for the research and
development of terahertz (THz) components, sources, and detectors because of their various …
development of terahertz (THz) components, sources, and detectors because of their various …
[PDF][PDF] Diamond based DDR IMPATTs: prospects and potentiality as millimeter-wave source at 94 GHz atmospheric window
A Acharyya, K Datta, R Ghosh, M Sarkar… - …, 2013 - academia.edu
Large-signal simulation is carried out in this paper to investigate the prospects and
potentiality of Double-Drift Region (DDR) Impact Avalanche Transit Time (IMPATT) device …
potentiality of Double-Drift Region (DDR) Impact Avalanche Transit Time (IMPATT) device …
Terahertz frequency performance of double drift IMPATT diode based on opto-sensitive semiconductor
M Mukherjee, N Mazumder, SK Roy… - 2007 Asia-Pacific …, 2007 - ieeexplore.ieee.org
Terahertz characteristics of opto-sensitive InP based double drift IMPATT diode with and
without optical radiation are studied and the results are compared with another opto …
without optical radiation are studied and the results are compared with another opto …
An opto-sensitive InP based Impatt diode for application in Terahertz regime
M Mukherjee, N Mazumder… - … Workshop on Physics …, 2007 - ieeexplore.ieee.org
The dynamic properties of an InP p+ pnn+ IMPATT diode at 0.5 terahertz are studied through
a simulation experiment. The study indicates that the InP IMPATT may deliver 27.0 mW of RF …
a simulation experiment. The study indicates that the InP IMPATT may deliver 27.0 mW of RF …
Terahertz radiation from silicon carbide charge plasma avalanche transit time source
A Acharyya - Sādhanā, 2021 - Springer
In this paper, a junction-less charge plasma (CP) double-drift region (DDR) impact
avalanche transit time (IMPATT) diode structure has been proposed for realizing a high …
avalanche transit time (IMPATT) diode structure has been proposed for realizing a high …