Investigation of the interface state characteristics of the Al/Al2O3/Ge/p-Si heterostructure over a wide frequency range by capacitance and conductance measurements
Abstract In this work, Al/Al 2 O 3/Ge/p-Si heterostructures were fabricated by e-beam thermal
evaporation. The EDX (energy dispersive X-ray spectroscopy) map visually obtained the …
evaporation. The EDX (energy dispersive X-ray spectroscopy) map visually obtained the …
On frequency and voltage dependent physical characteristics and interface states characterization of the metal semiconductor (MS) structures with (Ti: DLC) interlayer
In this present study, the electrical parameters of Al/p-Si (MS) structures with (Ti-doped DLC)
interfacial layer were investigated between 1 kHz and 4 MHz utilizing impedance …
interfacial layer were investigated between 1 kHz and 4 MHz utilizing impedance …
Complex dielectric, complex electric modulus, and electrical conductivity in Al/(Graphene-PVA)/p-Si (metal-polymer-semiconductor) structures
S Karadaş, SA Yerişkin, M Balbaşı… - Journal of Physics and …, 2021 - Elsevier
In this study, the real and imaginary components of the complex dielectric (ε*= ε′-jε'′),
complex electric modulus (M*= M′+ jM'′), and electrical conductivity (σ ac) were …
complex electric modulus (M*= M′+ jM'′), and electrical conductivity (σ ac) were …
Comparison of the electrical and impedance properties of Au/(ZnOMn: PVP)/n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation
The effect of 60 Co-iradiation) on the electrical parameters in the Au/(ZnOMn: PVP)/n-Si SDs
have been investigated using the current-voltage (I–V) and capacitance/conductance …
have been investigated using the current-voltage (I–V) and capacitance/conductance …
Electrical parameters of Au/(% 1Ni-PVA)/n-Si (MPS) structure: Surface states and their lifetimes
The admittance measurements of the fabricated Au/(% 1Ni-PVA)/n-Si (MPS) structure were
performed within the frequency range of 5 kHz-5 MHz and voltage range of±3 V with 50 mV …
performed within the frequency range of 5 kHz-5 MHz and voltage range of±3 V with 50 mV …
The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO2:PVC) interface
The RuO2-doped organic polymer composite structure was used as the interface to study
the photodiode properties of a Schottky structure. Some basic electrical and optoelectrical …
the photodiode properties of a Schottky structure. Some basic electrical and optoelectrical …
Variation of the surface states and series resistance depending on voltage, and their effects on the electrical features of a Schottky structure with CdZnO interface
E Erbilen Tanrıkulu, İ Taşçıoğlu - Journal of Electronic Materials, 2023 - Springer
In the present study, voltage-dependent variation of the interface traps (D it) and series
resistance (R s) and their effects on the electrical features of a Schottky structure with CdZnO …
resistance (R s) and their effects on the electrical features of a Schottky structure with CdZnO …
The investigation of effects of (Fe2O4-PVP) organic-layer, surface states, and series resistance on the electrical characteristics and the sources of them
S Altındal Yerişkin - Journal of Materials Science: Materials in Electronics, 2019 - Springer
In this work, Au/n-Si (MS) structures with and without (Fe 2 O 4-doped PVP) interlayer were
prepared with the same conditions to see effects of organic layer on the electrical …
prepared with the same conditions to see effects of organic layer on the electrical …
The source of negative capacitance and anomalous peak in the forward bias capacitance-voltage in Cr/p-si Schottky barrier diodes (SBDs)
The frequency and voltage dependence of capacitance–voltage (C–V) and conductance-
voltage (G/ω− V) characteristics of the Cr/p-Si metal semiconductor (MS) Schottky barrier …
voltage (G/ω− V) characteristics of the Cr/p-Si metal semiconductor (MS) Schottky barrier …
Frequency and voltage-dependent electrical parameters, interface traps, and series resistance profile of Au/(NiS: PVP)/n-Si structures
A thin (NiS-doped PVP) interface layer was spin-coated on n-Si substrate, and between Au
contact were prepared on the surface by the sputtering method and then their basic …
contact were prepared on the surface by the sputtering method and then their basic …