A highly integrated PCB embedded GaN full-bridge module with ultralow parasitic inductance
Z Qi, Y Pei, L Wang, Q Yang… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
To fully take the high-frequency advantage of gallium nitride (GaN) devices, this article
presents a face-up integrated power module based on the printed circuit board embedding …
presents a face-up integrated power module based on the printed circuit board embedding …
Accurate and effective nonlinear behavioral modeling of a 10-W GaN HEMT based on LSTM neural networks
This paper presents a novel nonlinear behavioral modeling methodology based on long-
short-term memory (LSTM) networks for gallium nitride (GaN) high-electron-mobility …
short-term memory (LSTM) networks for gallium nitride (GaN) high-electron-mobility …
Improved empirical formula modeling method using neuro-space mapping for coupled microstrip lines
S Yan, F Qian, C Li, J Wang, X Wang, W Liu - Micromachines, 2023 - mdpi.com
In this paper, an improved empirical formula modeling method using neuro-space mapping
(Neuro-SM) for coupled microstrip lines is proposed. Empirical formulas with correction …
(Neuro-SM) for coupled microstrip lines is proposed. Empirical formulas with correction …
A Mesh Space Mapping Modeling Method with Mesh Deformation for Microwave Components
S Yan, C Li, M Li, Z Li, X Wang, J Wang, Y Xie - Micromachines, 2023 - mdpi.com
In this study, a low-cost space mapping (SM) modeling method with mesh deformation is
proposed for microwave components. In this approach, the coarse-mesh model with mesh …
proposed for microwave components. In this approach, the coarse-mesh model with mesh …
Statistical modeling of gan power devices with asm-gan model
D Mahajan, S Khandelwal - 2020 IEEE International …, 2020 - ieeexplore.ieee.org
In this paper, we have used electrical specifications from the data-sheet of a commercially
available GaN HEMT power device and a well calibrated physical model using ASM-GaN …
available GaN HEMT power device and a well calibrated physical model using ASM-GaN …
Parameter extraction in asm-hemt model
S Khandelwal, S Khandelwal - Advanced SPICE Model for GaN HEMTs …, 2022 - Springer
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SpringerLink Account Menu Find a journal Publish with us Track your research Search Cart …
Analysis and modeling of OFF-state hysteretic losses in GaN power HEMTs
DD Mahajan, S Khandelwal - Solid-State Electronics, 2021 - Elsevier
We present a detailed analysis of large-signal Sawyer–Tower measurements on a power
GaN HEMT device in OFF-state. The measurements show hysteresis which results in an …
GaN HEMT device in OFF-state. The measurements show hysteresis which results in an …
[PDF][PDF] Studies on Miniaturization of Power Converters
關翔太 - 2024 - ir.library.osaka-u.ac.jp
The development of wide bandgap power semiconductor devices has enabled the
miniaturization of power conversion circuits. In particular, the implementation of GaN power …
miniaturization of power conversion circuits. In particular, the implementation of GaN power …
An Efficient Integrated Circuit Simulator And Time Domain Adjoint Sensitivity Analysis
J Li - 2022 - scholar.smu.edu
In this paper, we revisit time-domain adjoint sensitivity with a circuit theoretic approach and
an efficient solution is clearly stated in terms of device level. Key is the linearization of the …
an efficient solution is clearly stated in terms of device level. Key is the linearization of the …
Probe Measurement System for Surface Mount Devices at Radio Frequencies
R Kishikawa, M Horibe, T Ohi… - 2022 98th ARFTG …, 2022 - ieeexplore.ieee.org
This paper presents a new probe system for measuring the scattering parameters of surface
mount devices in radio frequency range in response to the demand for operating power …
mount devices in radio frequency range in response to the demand for operating power …