Area and Bandwidth Enhancement of an n+/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology
SS Kohneh Poushi, B Goll, K Schneider-Hornstein… - Sensors, 2023 - mdpi.com
This paper presents a CMOS-integrated dot avalanche photodiode (dot-APD) that features a
small central n+/p-well hemispherical cathode/p-well structure circularly surrounded by an …
small central n+/p-well hemispherical cathode/p-well structure circularly surrounded by an …
A near-infrared enhanced field-line crowding based CMOS-integrated avalanche photodiode
SSK Poushi, C Gasser, B Goll, M Hofbauer… - IEEE Photonics …, 2023 - ieeexplore.ieee.org
This paper presents a CMOS-integrated linear-mode avalanche photodiode based on
electric field-line crowding (EFLC-APD) to form an effective multiplication zone and a wide …
electric field-line crowding (EFLC-APD) to form an effective multiplication zone and a wide …
Highly-Sensitive Integrating Optical Receiver With Large PIN Photodiode
SM Laube, C Gasser… - IEEE Photonics …, 2024 - ieeexplore.ieee.org
This paper presents a highly-sensitive monolithic optoelectronic receiver in CMOS. An
integrating front-end with noise matching via an negative Miller capacitance is proposed, to …
integrating front-end with noise matching via an negative Miller capacitance is proposed, to …
[图书][B] Ultra-Sensitive PIN and Avalanche Photodiode Receivers
H Zimmermann - 2023 - iopscience.iop.org
This book focuses on ultra-sensitive PIN and avalanche photodiode receiver (USPAR) ICs
for data communication. After more than 20 years of exploitation of the pin-photodiode …
for data communication. After more than 20 years of exploitation of the pin-photodiode …