Phonon dynamics is explored in mechanically exfoliated two-dimensional WSe 2 using
temperature-dependent and laser-power-dependent Raman and photoluminescence (PL) …

The mobility of an InGaN based two-dimensional electron gas is determined for an indium
content ranging from 0 to 20%. While the electron density remains constant at∼ 2.5× 10 13 …

High-performance InGaN-channel high-electron-mobility transistors (HEMTs) are fabricated
and investigated in detail. The transconductance exhibits a high stability over a wide range …

Pulsed metal organic chemical vapor deposition (P-MOCVD) is introduced into the growth of
high quality InGaN channel heterostructures. The effects of InGaN channel growth …

InGaN has a smaller electron effective mass and is expected to be used as a channel
material for high-electron-mobility transistors. However, it is an alloy semiconductor with a …

Abstract The InN/GaN digital alloy is a superlattice-like nanostructure formed by periodically
stacking ultra-thin InN and GaN layers. In this study, we calculate the electron mobility in …

In this study, we investigate the effects of Si-doped GaN insert layer on the structural and
electrical characteristics of AlGaN/GaN/GaN: Si/AlN double-heterostructure high-electron …

High quality InAlN/InGaN/InAlN/InGaN double channel heterostructures were proposed and
grown by metal organic chemical vapor deposition. Benefiting from the adoption of the …

The optical and electrical conductivity behavior of materials produced at various pressures
was investigated using many physical models. The highest electrical conductivity value of …

Abstract In _ 0.6628 Ga _ 0.3372 N In 0.6628 Ga 0.3372 N thin film was coated on GaN/n-Si
(100) under various powers. Optical properties, crystal structure, bonding properties …