State-of-the-art magnetic hard disk drives

IR McFadyen, EE Fullerton, MJ Carey - Mrs Bulletin, 2006 - cambridge.org
Magnetic recording has progressed dramatically over the last 50 years, with an increase of
almost eight orders of magnitude in the amount of information stored per unit area of disk …

Current trends in planar Hall effect sensors: evolution, optimization, and applications

A Elzwawy, H Pişkin, N Akdoğan… - Journal of Physics D …, 2021 - iopscience.iop.org
The advantages of planar Hall effect (PHE) sensors—their thermal stability, very low
detection limits, and high sensitivities—have supported a wide range of advanced …

[HTML][HTML] Advances and key technologies in magnetoresistive sensors with high thermal stabilities and low field detectivities

B Lim, M Mahfoud, PT Das, T Jeon, C Jeon, M Kim… - APL Materials, 2022 - pubs.aip.org
Advances in micro-and nanotechnology have led to rapid employment of spintronic sensors
in both recording and non-recording applications. These state-of-the-art magnetoresistive …

Structural and magnetic modifications of Cr-implanted Permalloy

J Fassbender, J Von Borany, A Mücklich, K Potzger… - Physical Review B …, 2006 - APS
The static and dynamic magnetic properties, especially the magnetic damping behavior,
have been investigated as a function of saturation magnetization in thin Permalloy films. Ion …

High magnetoresistance in sputtered Permalloy thin films through growth on seed layers of (Ni/sub 0.81/Fe/sub 0.19/)/sub 1-x/Cr/sub x

WY Lee, MF Toney, D Mauri - IEEE transactions on magnetics, 2000 - ieeexplore.ieee.org
The use of thin (Ni/sub 0.81/Fe/sub 0.19/)/sub 1-x/Cr/sub x/seed layer for obtaining high
anisotropic magnetoresistance in Permalloy (Ni/sub 0.81/Fe/sub 0.19/) films is reported. The …

Domain Wall Relaxation, Creep, Sliding, and Switching in Superferromagnetic Discontinuous Multilayers

X Chen, O Sichelschmidt, W Kleemann, O Petracic… - Physical review …, 2002 - APS
The ac susceptibility of a superferromagnetic discontinuous multilayer [C o 80 F e 20 (1.4
nm)/A l 2 O 3 (3 nm)] 10 is measured as a function of temperature, frequency, and field …

Effect of TaN buffer layer on the sensitivity of ASIC-integrated AMR sensors

J Tian, Z Zhang, W Hou, Z Wang, G Yang, S Li… - Journal of Magnetism …, 2023 - Elsevier
This study investigates the impact of a TaN buffer layer on the performance of ASIC-
integrated Anisotropic Magnetoresistive (AMR) position sensors. Our findings demonstrate …

Giant magnetoresistance of metallic exchange-coupled multilayers and spin valves

VV Ustinov, MA Milyaev, LI Naumova - Physics of Metals and …, 2017 - Springer
The microstructure and the magnetic and magnetotransport properties have been
investigated depending on the types of the magnetic and nonmagnetic materials …

Research progress in anisotropic magnetoresistance

CJ Zhao, L Ding, JS HuangFu, JY Zhang, GH Yu - Rare Metals, 2013 - Springer
Anisotropic magnetoresistance (AMR) is an important physical phenomenon that has broad
application potential in many relevant fields. Thus, AMR is one of the most attractive …

Effect of NiFeCr seed and capping layers on exchange bias and planar Hall voltage response of NiFe/Au/IrMn trilayer structures

A Talantsev, A Elzwawy, CG Kim - Journal of Applied Physics, 2018 - pubs.aip.org
Thin films and cross junctions, based on NiFe/Au/IrMn structures, were grown on Ta and
NiFeCr seed layers by magnetron sputtering. The effects of substitution of Ta with NiFeCr in …