This paper will review emerging non-volatile memory (NVM) technologies, with the focus on
phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM) …

This brief presents a review of developments in spin-transfer-torque magnetoresistive
random access memory (STT-MRAM) sensing over the past 20 years from a circuit design …

This paper explores the scalability of in-plane and perpendicular MTJ based STT-MRAMs
from 65 nm to 8 nm while taking into consideration realistic variability effects. We focus on …

Neural network technologies have taken center stage owing to their powerful computing
capability for supporting deep learning in artificial intelligence. However, conventional …

Nonvolatile spintronic devices have potential advantages, such as fast read/write and high
endurance together with back-end-of-the-line compatibility, which offers the possibility of …

Spin transfer torque magnetic random access memory (STT-MRAM) is a competitive, future
memory technology for last-level embedded caches. It exhibits ultra-high density (3-4X of …

<? Pub Dtl=""?> A 1 Mb nonvolatile embedded memory using a four transistor and two spin-
transfer-torque (STT) magnetic tunnel junction (MTJ) cell is designed and fabricated to …

The spin transfer torque magnetoresistive random access memory (STT-MRAM) is the
leading candidate for spin-based memories. Nevertheless, the high write energy and read …

In Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM), the most
commonly used timing scheme for conventional Voltage-mode Sense Amplifier (VSA) is the …

STT-MRAMs are prone to data corruption due to inadvertent bit flips. Traditional methods
enhance robustness at the cost of area/energy by using larger cell sizes to improve the …