Abstract Tunnel Filed Effect Transistors (TFETs) have appeared as an alternative for
conventional CMOS due to their advantages like very low leakage current and steep sub …

This article investigates the performance of a vertically grown GaSb/Si tunnel field effect
transistor (V-TFET) with a source pocket to enhance the performance of the device. The …

TFET is an exciting device for ultra-low and low power implementations since it improves
electrical performance while also providing steeper switching ratio. This study encloses with …

A comprehensive investigation of dielectrically modulated Ge-source short double-gate
PNPN tunnel FET (SG-PNPN TFET) based label-free biosensor is presented. Short gates …

In this article, we introduce a novel vertical tunneling transistor that uses two germanium
source regions and a T-shaped silicon channel and investigate its performance for low …

In this manuscript, we come up with a new line-tunneling-based channel-engineered
GaAsSb/GaSb heterojunction Source-All-Around Vertical Nanowire TFET (SAA-NW-VTFET) …

In this paper, we propose a Si/Ge heterojunction TFET with two in-line tunneling junctions to
enhance the low on-state current of TFETs, which is their main drawback. The device …

In this article, we introduce a double-gate nanotube tunneling field-effect transistor with high
scalability based on the Si/Ge heterostructure. Our device includes two Ge source regions …

A detailed analysis of low frequency noise behavior of two different vertical TFETs namely
n​+​ pocket VTFET and dual MOS capacitor (D-MOS) VTFET is presented in this work …

This paper reports the DC, RF and circuit-level performance analysis of short-channel Ge/Si
based source-pocket engineered (SPE) vertical heterojunction tunnel field effect transistors …