Temperature influence on GaN HEMT equivalent circuit
The purpose of this letter is to present an experimental analysis of the temperature effects on
the small-signal equivalent circuit of a GaN HEMT. With the aim of contributing to the …
the small-signal equivalent circuit of a GaN HEMT. With the aim of contributing to the …
The large world of FET small‐signal equivalent circuits
The small‐signal equivalent circuit modeling of microwave field‐effect transistors (FETs) is
an evergreen and ever flourishing research field that has to be up‐to‐date with …
an evergreen and ever flourishing research field that has to be up‐to‐date with …
Noise characterization and modeling of GaN-HEMTs at cryogenic temperatures
MA Mebarki, RFD Del Castillo… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
We report on the noise characterization and modeling of AlGaN/GaN high-electron-mobility
transistors (HEMTs) at a cryogenic temperature (CT) of K within the frequency range of 4.5 …
transistors (HEMTs) at a cryogenic temperature (CT) of K within the frequency range of 4.5 …
Surface potential based modeling of thermal noise for HEMT circuit simulation
A Dasgupta, S Khandelwal… - IEEE Microwave and …, 2015 - ieeexplore.ieee.org
In this letter, an analytical surface potential based compact model for thermal noise in high
electron mobility transistors (HEMTs) is presented. The model is based on the recently …
electron mobility transistors (HEMTs) is presented. The model is based on the recently …
A study of DC and RF transconductance for different technologies of HEMT at low and high temperatures
We report on the measured effects of temperature on the DC and RF transconductance for
several important HEMT technologies. Six different HEMT transistors were evaluated. Single …
several important HEMT technologies. Six different HEMT transistors were evaluated. Single …
High-periphery GaN HEMT modeling up to 65 GHz and 200° C
In this article, we report on the temperature-dependent GaN HEMT behavior. To evaluate the
potentialities of this kind of active solid-state electronic device at its best, the experiments are …
potentialities of this kind of active solid-state electronic device at its best, the experiments are …
An improved noise modeling method using a quasi-physical zone division model for algan/gan hemts
S Mao, R Xu, B Yan, Y Xu - IEEE Transactions on Electron …, 2023 - ieeexplore.ieee.org
Accurate characterization of transistor noise performance is significant for low-noise
amplifier (LNA) design. The conventional empirical noise model contains too many fitting …
amplifier (LNA) design. The conventional empirical noise model contains too many fitting …
Temperature-dependent access resistances in large-signal modeling of millimeter-wave AlGaN/GaN HEMTs
X Zhao, Y Xu, Y Jia, Y Wu, R Xu, J Li… - IEEE Transactions …, 2017 - ieeexplore.ieee.org
In this paper, a new method for the separate extraction of the temperature-dependent source
(R s) and drain (R d) access resistances in gallium nitride (GaN) high electron-mobility …
(R s) and drain (R d) access resistances in gallium nitride (GaN) high electron-mobility …
An X-band AlGaN/GaN MMIC receiver front-end
M Thorsell, M Fagerlind, K Andersson… - IEEE Microwave and …, 2009 - ieeexplore.ieee.org
This letter presents an integrated AlGaN/GaN X-band receiver front-end. This is to the
authors knowledge the first published results of an integrated AlGaN/GaN MMIC receiver …
authors knowledge the first published results of an integrated AlGaN/GaN MMIC receiver …
Investigation on the thermal behavior of microwave GaN HEMTs
The investigation of the DC and microwave characteristics versus the ambient temperature
is a key issue for active solid-state devices, since the operating temperature can strongly …
is a key issue for active solid-state devices, since the operating temperature can strongly …