A method of implementing three-dimensional (3D) integration of multiple integrated circuit
(IC) devices includes forming a first insulating layer over a first IC device; forming a second …

A method of making 3D integrated circuits and a 3D integrated circuit structure. There is a
first semiconductor structure joined to a second semiconductor structure. Each …

A method includes forming a first integrated circuit (IC) device having a first substrate, an
alignment via defined in the first substrate, a first wiring layer over the alignment via, and a …

The reduction of defects and high-speed copper filling into a through-silicon-via (TSV) for the
three-dimensional stacking of Si chips were investigated. The via, with a diameter and depth …

In this investigation, the chip-last, redistribution-layer (RDL)–first, fan-out panel-level
packaging (FOPLP) for heterogeneous integration is studied. Emphasis is placed on the …

The through-silicon via (TSV) approach is crucial for three-dimensional integrated circuit (3-
D IC) packaging technology. However, there are still several challenges in the TSV …

This study aims at developing an advanced clamped through-silicon via (C-TSV)
interconnection technology for three-dimensional (3D) chip-to-chip or chip-to-wafer …

Packaging of radio frequency (RF) microelectromechanical system (MEMS) devices requires
a good electrical performance, and thus requires the parasitic effects of packaging to be …

To prevent potential yield loss, achieve TSV with higher aspect ratio, improve the bonding
reliability, and reduce the process cost, a clamped through silicon via (C-TSV) …

Abstract Three-dimensional (3-D) integration and packaging with through silicon via (TSV) is
an emerging trend for overcoming the limitation of integration scale in Micro-electro …