The effect of metal work function on the barrier height of metal/CdS/SnO2/In–Ga structures
In order to interpret the effect of metal work function on the formation of the barrier height at
metal/semiconductor (M/S) interface, the CdS/SnO 2/In–Ga structures with several metals …
metal/semiconductor (M/S) interface, the CdS/SnO 2/In–Ga structures with several metals …
Electrical and optical properties of (n) ZnO/(p) CdTe heterojunction and its performance as a photovoltaic converter
Thin film heterojuctions of the type (n) ZnO/(p) CdTe with different doping concentration were
prepared by vacuum evaporation, and their electrical and optical properties, both in dark …
prepared by vacuum evaporation, and their electrical and optical properties, both in dark …
The structure and composition of Te/CdS thin film diodes
AG Fitzgerald - Thin solid films, 1987 - Elsevier
The composition and crystal structure of the interfacial region in thin film Te/CdS
heterojunctions were investigated using Auger electron spectroscopy and reflection electron …
heterojunctions were investigated using Auger electron spectroscopy and reflection electron …