During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

Implantation-free mesa-etched ultra-high-voltage (0.08 mm 2) 4H-SiC bipolar junction
transistors (BJTs) with record current gain of 139 are fabricated, measured, and analyzed by …

In this letter, a trench and field limiting rings co-assisted JTE termination with NPN sandwich
epitaxial wafers for 4H-SiC devices is proposed and experimentally demonstrated for the …

The junction termination extension (JTE) structures for ultrahigh-voltage (UHV) devices
consumes a considerable part of the semiconductor chip area. The JTE area is closely …

Three 4H-SiC bipolar junction transistor designs with different emitter cell geometries (linear
interdigitated fingers, square cell geometry, and hexagon cell geometry) are fabricated …

Implantation-free mesa etched ultra-high-voltage 4H-SiC PiN diodes are fabricated,
measured and analyzed by device simulation. The diode's design allows a high breakdown …

In an increasingly electrified, technology-driven world, power electronics is central to the
entire clean energy manufacturing economy. Power switching semiconductor devices are …

For the termination in high-voltage SiC thyristor, this article proposes a single-mask
implantation-free solution named aperture density modulation technique. Using this …

This paper gives an overview of the current state of the art device technology for SiC discrete
devices and applications. The superior switching performance is discusses as well as the …

This chapter covers the process integration of SiC MOSFETs. All fabrication steps along with
their required mask layout are described. Besides, the main challenges in the processing …