[HTML][HTML] Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix
A Kole, P Chaudhuri - AIP Advances, 2014 - pubs.aip.org
A moderately low temperature (≤ 800 C) thermal processing technique has been described
for the growth of the silicon quantum dots (Si-QD) within microcrystalline silicon carbide (μc …
for the growth of the silicon quantum dots (Si-QD) within microcrystalline silicon carbide (μc …
Structural characterization of superlattice of microcrystalline silicon carbide layers for photovoltaic application
We have systematically studied a series of silicon carbide multilayer (# SiC) samples, each
consisting of 30 periods of two alternating layers of microcrystalline silicon carbide (μc-SiC …
consisting of 30 periods of two alternating layers of microcrystalline silicon carbide (μc-SiC …
Analysis of the microstructure of silicon quantum dot superlattice embedded microcrystalline silicon carbide for solar cell application
We have recently demonstrated [1] pin structure diodes with the intrinsic (i) layers
comprising of periodic depositions of silicon quantum dot embedded microcrystalline silicon …
comprising of periodic depositions of silicon quantum dot embedded microcrystalline silicon …