Hot-carrier optoelectronic devices based on semiconductor nanowires

J Fast, U Aeberhard, SP Bremner, H Linke - Applied Physics Reviews, 2021 - pubs.aip.org
In optoelectronic devices such as solar cells and photodetectors, a portion of electron-hole
pairs is generated as so-called hot carriers with an excess kinetic energy that is typically lost …

Curing of aged gate dielectric by the self-heating effect in MOSFETs

JY Park, DI Moon, GB Lee… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Gate dielectric damage caused by both internal and external stresses is becoming worse
because of aggressive complementary metal–oxide–semiconductor (CMOS) scaling …

Self‐Curable Synaptic Ferroelectric FET Arrays for Neuromorphic Convolutional Neural Network

W Shin, J Im, RH Koo, J Kim, KR Kwon… - Advanced …, 2023 - Wiley Online Library
With the recently increasing prevalence of deep learning, both academia and industry
exhibit substantial interest in neuromorphic computing, which mimics the functional and …

Recovery of cycling endurance failure in ferroelectric FETs by self-heating

H Mulaosmanovic, ET Breyer… - IEEE Electron …, 2018 - ieeexplore.ieee.org
This letter investigates the impact of self-heating on the post-cycling functionality of a scaled
hafnium oxide-based ferroelectric field-effect transistor (FeFET). The full recovery of FeFET …

A Recoverable Synapse Device Using a Three‐Dimensional Silicon Transistor

J Hur, BC Jang, J Park, DI Moon, H Bae… - Advanced Functional …, 2018 - Wiley Online Library
To prepare for the upcoming big‐data era, numerous attempts are underway to develop a
neuromorphic system which is capable of imitating a biologic neural network. Despite the …

Toward Optimized In‐Memory Reinforcement Learning: Leveraging 1/f Noise of Synaptic Ferroelectric Field‐Effect‐Transistors for Efficient Exploration

J Kim, W Shin, J Yim, D Kwon… - Advanced Intelligent …, 2024 - Wiley Online Library
Reinforcement learning (RL), exhibiting outstanding performance in various fields, requires
large amounts of data for high performance. While exploration techniques address this …

Investigation of self-heating effects in gate-all-around MOSFETs with vertically stacked multiple silicon nanowire channels

JY Park, BH Lee, KS Chang, DU Kim… - … on Electron Devices, 2017 - ieeexplore.ieee.org
The self-heating effects (SHEs) in gate-all-around (GAA) MOSFETs with vertically stacked
silicon nanowire (SiNW) channels are investigated. Direct observations using thermal …

Low-temperature deuterium annealing for the recovery of ionizing radiation-induced damage in MOSFETs

DH Wang, SS Yoon, JY Ku, DH Jung… - … on Device and …, 2023 - ieeexplore.ieee.org
Ionizing radiation generates bulk traps as well as interface traps in the gate dielectric. These
traps cause unwanted threshold voltage shifting, subthreshold swing (SS) and increased …

Highly efficient self-curing method in MOSFET using parasitic bipolar junction transistor

W Shin, RH Koo, S Hong, D Kwon… - IEEE Electron …, 2022 - ieeexplore.ieee.org
We propose a hybrid self-curing method based on the parasitic bipolar junction transistor
(PBJT) inherent to metal-oxide-semiconductor field-effect transistor (MOSFET). The PBJT …

System on microheater for on-chip annealing of defects generated by hot-carrier injection, bias temperature instability, and ionizing radiation

JW Han, M Kebaili… - IEEE Electron Device …, 2016 - ieeexplore.ieee.org
An on-chip immune system against hot-carrier stress, bias temperature instability, and total
ionizing dose degradation is presented. A system on microheater provides defect annealing …