On the road towards next generation high efficiency solar cells, the ternary Indium Gallium
Nitride (InGaN) alloy is a good passenger since it allows to cover the whole solar spectrum …

L'alliage de Nitrure de Gallium et d'Indium (InGaN) est devenu au cours des dernières
années un semi-conducteur important pour la réalisation de composants optoélectroniques …

Tile-based self-assembly is a robust system in the construction of three-dimensional DNA
nanostructures but it has been rarely applied to other helical biopolymers. β-Glucan is an …

Single junction solar cells are insufficient in absorbing wider range of solar spectrum, so
multijunction solar cells are used to absorb wider range of solar wavelength and hence …

This research work aims to summarize the potentiality of InxGa1-xN solar cell based on the
research that has been carried out in recent times. InGaN is an important III-V semiconductor …

In this article, optic properties of AlInGaN compounds such as real and imaginary part of
dielectric function, optical conductivity, refractive index and extinction index have been …