Methods of fast analysis of DC–DC converters—A review

P Górecki, K Górecki - Electronics, 2021 - mdpi.com
The paper discusses the methods of fast analysis of DC–DC converters dedicated to
computer programmes. Literature methods of such an analysis are presented, which enable …

Lumped thermal coupling model of multichip power module enabling case temperature as reference node

M Xu, K Ma, X Cai, G Cao… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Insulated gate bipolar transistor (IGBT) modules with multiple chips have wide range of
applications, and the correct estimation for the thermal behaviors inside IGBT modules is …

Analysis, design, and implementation of junction temperature fluctuation tracking suppression strategy for SiC MOSFETs in wireless high-power transfer

R Wang, L Tan, C Li, T Huang, H Li… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
In order to improve system reliability and reduce device thermal fatigue failure in multiload
wireless power transfer (WPT) systems for electric vehicles, the implementation of the …

Thermal analysis and junction temperature estimation under different ambient temperatures considering convection thermal coupling between power devices

K Wei, P Shi, P Bao, X Gao, Y Du, Y Qin - Applied Sciences, 2023 - mdpi.com
The convection thermal coupling between adjacent power devices in power converters is
dependent on the ambient temperature. When the ambient temperature changes, the …

[PDF][PDF] 基于热网络分区等效策略的Si/SiC 混合器件耦合热参数辨识方法

龙柳, 肖凡, 涂春鸣, 肖标, 郭祺 - 电工技术学报, 2024 - dgjsxb.ces-transaction.com
摘要由硅(Si) 绝缘栅双极型晶体管(IGBT) 与碳化硅(SiC) 金属氧化物半导体场效应晶体管(
MOSFET) 并联构成的混合器件可打破单一Si 基器件和SiC 基器件的局限性 …

[HTML][HTML] Analysis of Key Factors Affecting Case-to-Ambient Thermal Resistance in Thermal Modeling of Power Devices

K Wei, P Shi, P Bao, C Liu, Y Qin - Energies, 2024 - mdpi.com
In the application of power converters, the ambient temperature (Ta) experiences significant
fluctuations. For the case-to-ambient resistance (Rca), apart from the influence of the …

A coupling thermal parameter extraction method of Si/SiC hybrid switch

L Long, F Xiao, C Tu, B Xiao… - CSEE Journal of Power …, 2024 - ieeexplore.ieee.org
The hybrid switch (HyS), composed of Si insulated gate bipolar transistors (IGBTs) and SiC
metal-oxide-semiconductor field-effect transistors (MOSFETs) in parallel, offers comparable …

Frequency-Domain Thermal Coupling Model for Power Module with Multi-Paralleled Chips

T Cai, D Zhou, T Wu, K Ma - IEEE Journal of Emerging and …, 2024 - ieeexplore.ieee.org
In high-power applications, power modules with multi-paralleled chips have been widely
used. The reliability of power electronic devices is intimately tied to thermal characteristics …

Intelligent prediction method for heat dissipation state of converter heatsink

H Jia, J Chen, H Fu, R Qiu, Z Liu - IEEE Access, 2022 - ieeexplore.ieee.org
Currently, the offline manual periodic detection method is a well-established practice in
detecting the thermal state of the converter heatsink. This method, however, is huge in …

Two-Dimensional Photothermal Modeling of Multichip LEDs Device With Thermal Coupling Matrix by Microscopic Hyperspectral Imaging

G Liu, H Chen, Y Zheng, H Lin, S Lin… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
This article presents a method for determining the 2-D peak wavelength distribution of
multichip light-emitting diodes (LEDs) devices by relating their spectral properties to junction …