Lumped thermal coupling model of multichip power module enabling case temperature as reference node
Insulated gate bipolar transistor (IGBT) modules with multiple chips have wide range of
applications, and the correct estimation for the thermal behaviors inside IGBT modules is …
applications, and the correct estimation for the thermal behaviors inside IGBT modules is …
Analysis, design, and implementation of junction temperature fluctuation tracking suppression strategy for SiC MOSFETs in wireless high-power transfer
R Wang, L Tan, C Li, T Huang, H Li… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
In order to improve system reliability and reduce device thermal fatigue failure in multiload
wireless power transfer (WPT) systems for electric vehicles, the implementation of the …
wireless power transfer (WPT) systems for electric vehicles, the implementation of the …
Thermal analysis and junction temperature estimation under different ambient temperatures considering convection thermal coupling between power devices
K Wei, P Shi, P Bao, X Gao, Y Du, Y Qin - Applied Sciences, 2023 - mdpi.com
The convection thermal coupling between adjacent power devices in power converters is
dependent on the ambient temperature. When the ambient temperature changes, the …
dependent on the ambient temperature. When the ambient temperature changes, the …
[PDF][PDF] 基于热网络分区等效策略的Si/SiC 混合器件耦合热参数辨识方法
龙柳, 肖凡, 涂春鸣, 肖标, 郭祺 - 电工技术学报, 2024 - dgjsxb.ces-transaction.com
摘要由硅(Si) 绝缘栅双极型晶体管(IGBT) 与碳化硅(SiC) 金属氧化物半导体场效应晶体管(
MOSFET) 并联构成的混合器件可打破单一Si 基器件和SiC 基器件的局限性 …
MOSFET) 并联构成的混合器件可打破单一Si 基器件和SiC 基器件的局限性 …
[HTML][HTML] Analysis of Key Factors Affecting Case-to-Ambient Thermal Resistance in Thermal Modeling of Power Devices
K Wei, P Shi, P Bao, C Liu, Y Qin - Energies, 2024 - mdpi.com
In the application of power converters, the ambient temperature (Ta) experiences significant
fluctuations. For the case-to-ambient resistance (Rca), apart from the influence of the …
fluctuations. For the case-to-ambient resistance (Rca), apart from the influence of the …
A coupling thermal parameter extraction method of Si/SiC hybrid switch
L Long, F Xiao, C Tu, B Xiao… - CSEE Journal of Power …, 2024 - ieeexplore.ieee.org
The hybrid switch (HyS), composed of Si insulated gate bipolar transistors (IGBTs) and SiC
metal-oxide-semiconductor field-effect transistors (MOSFETs) in parallel, offers comparable …
metal-oxide-semiconductor field-effect transistors (MOSFETs) in parallel, offers comparable …
Frequency-Domain Thermal Coupling Model for Power Module with Multi-Paralleled Chips
T Cai, D Zhou, T Wu, K Ma - IEEE Journal of Emerging and …, 2024 - ieeexplore.ieee.org
In high-power applications, power modules with multi-paralleled chips have been widely
used. The reliability of power electronic devices is intimately tied to thermal characteristics …
used. The reliability of power electronic devices is intimately tied to thermal characteristics …
Intelligent prediction method for heat dissipation state of converter heatsink
H Jia, J Chen, H Fu, R Qiu, Z Liu - IEEE Access, 2022 - ieeexplore.ieee.org
Currently, the offline manual periodic detection method is a well-established practice in
detecting the thermal state of the converter heatsink. This method, however, is huge in …
detecting the thermal state of the converter heatsink. This method, however, is huge in …
Two-Dimensional Photothermal Modeling of Multichip LEDs Device With Thermal Coupling Matrix by Microscopic Hyperspectral Imaging
G Liu, H Chen, Y Zheng, H Lin, S Lin… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
This article presents a method for determining the 2-D peak wavelength distribution of
multichip light-emitting diodes (LEDs) devices by relating their spectral properties to junction …
multichip light-emitting diodes (LEDs) devices by relating their spectral properties to junction …