Designs of two quadruple-node-upset self-recoverable latches for highly robust computing in harsh radiation environments

A Yan, Z Li, J Cui, Z Huang, T Ni… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This article proposes two quadruple node upset (QNU) recoverable latches, namely QNU-
recoverable and high-impedance-state (HIS)-insensitive latch (QRHIL) and QRHIL-LC (low …

Novel quadruple-node-upset-tolerant latch designs with optimized overhead for reliable computing in harsh radiation environments

A Yan, Z Xu, X Feng, J Cui, Z Chen, T Ni… - IEEE transactions on …, 2020 - ieeexplore.ieee.org
With the rapid advancement of CMOS technologies, nano-scale CMOS latches have
become increasingly sensitive to multiple-node upset (MNU) errors caused by radiations …

Novel low cost, double-and-triple-node-upset-tolerant latch designs for nano-scale CMOS

A Yan, C Lai, Y Zhang, J Cui, Z Huang… - … on Emerging Topics …, 2018 - ieeexplore.ieee.org
This paper presents two novel low cost, double-and-triple-node-upset tolerant latch designs.
First, a novel low cost and double-node-upset (DNU) completely tolerant (LCDNUT) latch …

MURLAV: a multiple-node-upset recovery latch and algorithm-based verification method

A Yan, Z Li, Z Gao, J Zhang, Z Huang… - … on Computer-Aided …, 2024 - ieeexplore.ieee.org
In advanced CMOS technologies, integrated circuits are sensitive to multiple-node-upsets
(MNUs) induced in harsh radiation environments. The existing verification of the reliability of …

Single-event multiple effect tolerant RHBD14T SRAM cell design for space applications

NR Ch, B Gupta, G Kaushal - IEEE Transactions on Device and …, 2021 - ieeexplore.ieee.org
Static Random Access Memory (SRAM) is primarily used as a memory storage element,
which is susceptible to radiation-induced Single Event Upsets (SEUs). Hence, a robust …

Design of high-reliability memory cell to mitigate single event multiple node upsets

H Li, L Xiao, C Qi, J Li - … Transactions on Circuits and Systems I …, 2021 - ieeexplore.ieee.org
As technology scaling down, the sensitivity of SRAM cells to radiation-induced Single Event
Upsets (SEUs) increases, and Single Event Multiple Node Upsets (SEMNUs) due to charge …

Novel double-node-upset-tolerant memory cell designs through radiation-hardening-by-design and layout

A Yan, Z Wu, J Guo, J Song… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
This paper presents two novel memory cell designs that can completely tolerate double-
node upsets. First, a layout dependent cell is proposed. Since the cell has many redundant …

Design of double-upset recoverable and transient-pulse filterable latches for low-power and low-orbit aerospace applications

A Yan, Y Chen, Z Xu, Z Chen, J Cui… - … on Aerospace and …, 2020 - ieeexplore.ieee.org
To meet the requirements of both high reliability and low power in low-orbit aerospace
applications, this article first presents a single-event Double-Upset (SEDU) self-Recoverable …

A novel triple-node-upset-tolerant CMOS latch design using single-node-upset-resilient cells

Z Song, A Yan, J Cui, Z Chen, X Li… - … Test Conference in …, 2019 - ieeexplore.ieee.org
Nano-scale CMOS circuits are vulnerable to single-event triple-node-upsets (SETUs). This
paper proposes the design of a novel CMOS latch to tolerate any SETU using single-node …

Highly reliable quadruple-node upset-tolerant D-latch

S Hatefinasab, A Ohata, A Salinas, E Castillo… - IEEE …, 2022 - ieeexplore.ieee.org
As CMOS technology scaling pushes towards the reduction of the length of transistors,
electronic circuits face numerous reliability issues, and in particular nodes of D-latches at …