GaN and related III-nitrides have attracted considerable attention as promising materials for
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …

In this review, the structural, mechanical, thermal, and chemical properties of substrates
used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films …

The stress states in unintentionally doped GaN epilayers grown on Si (111), 6H-SiC (0001),
and c-plane sapphire, and their effects on optical properties of GaN films were investigated …

Cracking of GaN on Si usually occurs due to the large thermal mismatch of GaN and Si
when layer thicknesses exceed approximately 1 μm in metalorganic chemical vapor …

Single‐crystalline GaN‐based light‐emitting diodes (LEDs) with high efficiency and long
lifetime are the most promising solid‐state lighting source compared with conventional …

Two schemes of nucleation and growth of gallium nitride on Si (111) substrates are
investigated and the structural and electrical properties of the resulting films are reported …

We report on the growth and properties of GaN films grown on Si (111) substrates by
molecular beam epitaxy using ammonia. The properties of the layers show that our growth …

We present an in situ method for the determination of the stress in GaN layers on hetero‐
substrates, in particular Si, via measuring the wafer curvature. For device application it is …

Gallium nitride material devices and methods of forming the same are provided. The devices
include an electrode-defining layer. The electrode-defining layer typically has a via formed …

AlInN/GaN heterostructures have been proposed to possess advantageous properties for
field-effect transistors (FETs) over AlGaN/GaN [Kuzmík, IEEE Electron Device Lett. 22, 501 …