The field of orbitronics has emerged with great potential to impact information technology by
enabling environmentally friendly electronic devices. The main electronic degree of freedom …

The orbital magnetoelectric effect (OME) generically refers to the appearance of an orbital
magnetization induced by an applied electric field. Here, we show that nanoribbons of …

Profiles of the spin and orbital angular momentum accumulations induced by a
longitudinally applied electric field are explored in nanoribbons of p-band systems with a …

Spin-orbit torque (SOT) induced by spin Hall and interfacial effects in heavy-metal
(HM)/ferromagnetic (FM) bilayers has recently been employed to switch the magnetization …

We report on the magnetoresistance of textured films consisting of 3 d-ferromagnetic layers
sandwiched by Pt. While the conventional cos 2 φ behavior of the anisotropic …

We study the orbital Hall effect (OHE) in the AC regime using bilayer graphene (BLG) as a
prototypical material platform. While the unbiased BLG has gapless electronic spectra …

We present an ab initio based theoretical framework which elucidates the origin of the spin-
orbit torque (SOT) in normal-metal (NM)/ferromagnet (FM) heterostructures. The SOT is …

The ability to realistically simulate the electronic structure of superconducting materials is
important to understand and predict various properties emerging in both the …

The ultimate control of magnetic states of matter at femtosecond (or even faster) timescales
defines one of the most pursued paradigm shifts for future information technology. In this …

In bilayers consisting of a normal metal (N) with spin-orbit coupling and a ferromagnet (F),
the combination of the spin-Hall effect, the spin-transfer torque, and the inverse spin-Hall …