Recent progress in solution‐based metal oxide resistive switching devices
Metal oxide resistive switching memories have been a crucial component for the
requirements of the Internet of Things, which demands ultra‐low power and high‐density …
requirements of the Internet of Things, which demands ultra‐low power and high‐density …
Solution combustion synthesis: towards a sustainable approach for metal oxides
Solution combustion synthesis (SCS) has been widely used to produce simple and complex
oxides with a desired morphology (size and shape). SCS is valuable due to low cost …
oxides with a desired morphology (size and shape). SCS is valuable due to low cost …
Emergent solution based IGZO memristor towards neuromorphic applications
RA Martins, E Carlos, J Deuermeier… - Journal of Materials …, 2022 - pubs.rsc.org
Solution-based memristors are emergent devices, due to their potential in electrical
performance for neuromorphic computing combined with simple and cheap fabrication …
performance for neuromorphic computing combined with simple and cheap fabrication …
In situ radiation hardness study of amorphous Zn–in–Sn–O thin-film transistors with structural plasticity and defect tolerance
Solution-processed metal-oxide thin-film transistors (TFTs) with different metal compositions
are investigated for ex situ and in situ radiation hardness experiments against ionizing …
are investigated for ex situ and in situ radiation hardness experiments against ionizing …
Recent advances in metal-oxide thin-film transistors: Flexible/stretchable devices, integrated circuits, biosensors, and neuromorphic applications
Thin-film transistors using metal oxides have been investigated extensively because of their
high transparency, large area, and mass production of metal oxide semiconductors …
high transparency, large area, and mass production of metal oxide semiconductors …
Exploration of chemical composition of In–Ga–Zn–O system via PEALD technique for optimal physical and electrical properties
Abstract In–Ga–Zn–O (IGZO) material has been researched due to its favorable electrical
characteristics for application in thin‐film transistor (TFT) applications such as low off current …
characteristics for application in thin‐film transistor (TFT) applications such as low off current …
One-volt, solution-processed InZnO thin-film transistors
In this letter, we report solution-processed, high-performance Indium-Zinc-Oxide (IZO) thin-
film transistors (TFTs). The annealing temperature of IZO films are studied and found that …
film transistors (TFTs). The annealing temperature of IZO films are studied and found that …
Enhancement of the electrical performance and bias stability of RF-sputtered indium tin zinc oxide thin-film transistors with vertical stoichiometric oxygen control
J Lee, J Jin, S Maeng, G Choi, H Kim… - ACS Applied Electronic …, 2022 - ACS Publications
Indium tin zinc oxide (ITZO) thin-film transistors (TFTs) with different channel structures are
investigated. The electrical performance and bias stress stability of bilayer-channel ITZO …
investigated. The electrical performance and bias stress stability of bilayer-channel ITZO …
Al2O3/HfO2 Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors
Highlights A stable laminated Al2O3/HfO2 insulator is developed by atomic layer deposition
at a relatively lower temperature of 150° C. The flexible thin-film transistors (TFTs) with …
at a relatively lower temperature of 150° C. The flexible thin-film transistors (TFTs) with …
A Comparison between Solution-Based Synthesis Methods of ZrO2 Nanomaterials for Energy Storage Applications
The present study is focused on the synthesis of zirconium dioxide (ZrO2) nanomaterials
using the hydrothermal method assisted by microwave irradiation and solution combustion …
using the hydrothermal method assisted by microwave irradiation and solution combustion …