Next-generation mid-infrared sources
The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital
applications in molecular sensing, security and defense, energy conservation, and …
applications in molecular sensing, security and defense, energy conservation, and …
Ultrasmall HgTe quantum dots with near-unity photoluminescent quantum yields in the near and shortwave infrared
B Coffey, E Skytte, T Ahmed, ES Vasileiadou… - Chemistry of …, 2024 - ACS Publications
We demonstrate a low-temperature synthesis of ultrasmall (< 2 nm) HgTe quantum dots
(QDs) with superlative optical properties in the near and shortwave infrared. The tunable …
(QDs) with superlative optical properties in the near and shortwave infrared. The tunable …
Infrared detectors: Advances, challenges and new technologies
A Karim, JY Andersson - IOP Conference Series: Materials …, 2013 - iopscience.iop.org
Human knowledge of infrared (IR) radiation is about 200 years old. However it was in the
late 20th century that we developed a wide range of smart technologies for detection and …
late 20th century that we developed a wide range of smart technologies for detection and …
Construction of mixed-dimensional WS 2/Si heterojunctions for high-performance infrared photodetection and imaging applications
Z Wang, X Zhang, D Wu, J Guo, Z Zhao, Z Shi… - Journal of Materials …, 2020 - pubs.rsc.org
Recently, high-quality large-area two-dimensional (2D) layered materials are highly desired
for integrated optoelectronic devices and systems due to their unique optoelectrical …
for integrated optoelectronic devices and systems due to their unique optoelectrical …
Mid-infrared emission from In (Ga) Sb layers on InAs (Sb)
We demonstrate infrared light emission from thin epitaxially-grown In (Ga) Sb layers in InAs
(Sb) matrices across a wide range (3-8µm) of the mid-infrared spectral range. Our structures …
(Sb) matrices across a wide range (3-8µm) of the mid-infrared spectral range. Our structures …
Detectors and Their Noise Models
X Ke - Handbook of Optical Wireless Communication, 2024 - Springer
In optical wireless communication system, photoelectric conversion is realized by
photodetector at the receiver, and the noise in the detector will directly affect the …
photodetector at the receiver, and the noise in the detector will directly affect the …
Molecular beam epitaxy growth of InSb/GaAs quantum nanostructures
S Thainoi, S Kiravittaya, T Poempool… - Journal of Crystal …, 2017 - Elsevier
InSb/GaAs nanostructures grown by solid-source molecular beam epitaxy are investigated
in this work. Three-dimensional dot-like InSb nanostructures are obtained by self-assembled …
in this work. Three-dimensional dot-like InSb nanostructures are obtained by self-assembled …
Auger recombination in In (Ga) Sb/InAs quantum dots
T Zabel, C Reuterskiöld Hedlund, O Gustafsson… - Applied Physics …, 2015 - pubs.aip.org
We report on the epitaxial formation of type II In 0.5 Ga 0.5 Sb/InAs and InSb/InAs quantum
dot ensembles using metal organic vapor phase epitaxy. Employing scanning tunneling …
dot ensembles using metal organic vapor phase epitaxy. Employing scanning tunneling …
A performance assessment of type-II interband In0. 5Ga0. 5Sb QD photodetectors
Self-assembled quantum-dot (QD) structures with type-II band alignment to the surrounding
matrix material have been proposed as a III/V material approach to realize small-bandgap …
matrix material have been proposed as a III/V material approach to realize small-bandgap …
Transmission of infrared radiation through metallic photonic crystal structures
Monolithic integration of a metallic photonic crystal (mPhC) structure onto semiconductor
infrared (IR) photodetectors can enhance the detector performances. In order to …
infrared (IR) photodetectors can enhance the detector performances. In order to …