H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or
switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier …

(57) ABSTRACT A field-effect transistor (FET) with a round-shaped nano wire channel and a
method of manufacturing the FET are provided. According to the method, source and drain …

2011-05-26 Assigned to UNISANTIS ELECTRONICS (JAPAN) LTD. reassignment
UNISANTIS ELECTRONICS (JAPAN) LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE …

It is intended to provide a semiconductor device including a MOS transistor, comprising: a
semiconductor pillar; a bottom doped region formed in contact with a lower part of the …

It is intended to provide a semiconductor device comprising a circuit which has a connection
between a drain region or a source region of a first MOS transistor and a drain region ora …

2011-05-23 Assigned to UNISANTIS ELECTRONICS (JAPAN) LTD. reassignment
UNISANTIS ELECTRONICS (JAPAN) LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE …

METHOD OF FABRICATING THE 6,658,259 B2 12/2003 McIntosh SEMCONDUCTOR
STRUCTURE 6,740,937 B1 5/2004 Sushihara 6,815,277 B2 11/2004 Fried et al.(75) …

BACKGROUND For the past several decades, the Scaling of features in integrated circuits
has been a driving force behind an ever growing semiconductor industry. Scaling to Smaller …

US8772175B2 - Method for manufacturing semiconductor device and semiconductor
device - Google Patents US8772175B2 - Method for manufacturing semiconductor device …

(57) ABSTRACT A field-effect transistor (FET) with a round-shaped nano wire channel and a
method of manufacturing the FET are provided. According to the method, source and drain …