Carbon nanotube field effect transistor (CNTFET) is swiftly becoming an alternative to
conventional CMOS transistors due to superior transport properties, improved current …

Gate-all-around (GAA) is a promising MOSFET structure to continue scaling down the size of
CMOS devices beyond 7 nm technology node. This paper gives an overview of different …

The multigated architecture of FinFETs appear attractive for continued CMOS scaling with
the addition of discrete fin sizing that brings a new variable into the design. In this paper, a …

This study investigates the performance of the junctionless accumulation‐mode (JAM) bulk
FinFETs. Different electrical parameters are simulated and analysed for the device with …

Abstract The nanosheet Field Effect Transistors (FETs) are the promising device architecture
for sub-5 nm technology node as per the International Roadmap for Devices and Systems …

To meet the scaling targets and continue with Moore's Law, the transition from FinFET to
Gate-All-Around (GAA) nanosheet Field Effect Transistors (FETs) is the necessity for low …

In this paper, a dual-gate laterally double-diffused metal-oxide-semiconductor (DG-LDMOS)
device with shallow trench isolation (STI) and sinker at the source side has been proposed …

The remarkable development and continual proliferation of research in the nanotechnology
field have led to improvement in the efficiency of elementary devices. To improve their …

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect -
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Endless scaling of planar MOSFET over the past four decades has delivered proliferating
transistor density and performance to integrated circuits (ICs) at the cost of increase in short …