Bias temperature instability of mosfets: Physical processes, models, and prediction
CMOS technology dominates the semiconductor industry, and the reliability of MOSFETs is a
key issue. To optimize chip design, trade-offs between reliability, speed, power …
key issue. To optimize chip design, trade-offs between reliability, speed, power …
As-grown-generation (AG) model of NBTI: A shift from fitting test data to prediction
Negative bias temperature instabilities (NBTI) received little attention pre-2000, but have
been intensively investigated post-2000, as they become limiting device lifetime. The …
been intensively investigated post-2000, as they become limiting device lifetime. The …
Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation
To predict the negative bias temperature instability (NBTI) toward the end of pMOSFETs' ten
years lifetime, power-law-based extrapolation is the industrial standard method. The …
years lifetime, power-law-based extrapolation is the industrial standard method. The …
Advanced characterization of oxide traps: The dynamic time-dependent defect spectroscopy
T Grasser, K Rott, H Reisinger… - 2013 IEEE …, 2013 - ieeexplore.ieee.org
An accurate understanding of oxide traps is essential for a number of reliability issues,
including the bias temperature instability, hot carrier degradation, time-dependent dielectric …
including the bias temperature instability, hot carrier degradation, time-dependent dielectric …
Energy distribution of positive charges in gate dielectric: Probing technique and impacts of different defects
Positive charges (PCs) in gate dielectric shift the threshold voltage and cause a time-
dependent device variability. To assess their impact on circuits, it is useful to know their …
dependent device variability. To assess their impact on circuits, it is useful to know their …
On the volatility of oxide defects: Activation, deactivation, and transformation
Recent studies have clearly shown that oxide defects are more complicated than typically
assumed in simple two-state models, which only consider a neutral and a charged state. In …
assumed in simple two-state models, which only consider a neutral and a charged state. In …
The capture/emission time map approach to the bias temperature instability
T Grasser - Bias temperature instability for devices and circuits, 2013 - Springer
Recent results suggest that the bias temperature instability can in good approximation be
understood as the collective response of an ensemble of independent defects. Although the …
understood as the collective response of an ensemble of independent defects. Although the …
New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation
Variability of nanometer-size devices is a major challenge for circuit design. Apart from the
as-fabricated variability, the postfabrication degradation introduces a time-dependent …
as-fabricated variability, the postfabrication degradation introduces a time-dependent …
Impact of Charge-Trapping Effects on Reliability Instability in AlxGa1−xN/GaN High-Electron-Mobility Transistors with Various Al Compositions
In this study, we present a detailed analysis of trapping characteristics at the AlxGa1−
xN/GaN interface of AlxGa1− xN/GaN high-electron-mobility transistors (HEMTs) with …
xN/GaN interface of AlxGa1− xN/GaN high-electron-mobility transistors (HEMTs) with …
New insights into defect loss, slowdown, and device lifetime enhancement
Defects in gate oxide cause breakdown and shorten device lifetime. Early works mainly
focused on generation process that converts a precursor into a charged defect. Although it …
focused on generation process that converts a precursor into a charged defect. Although it …