Synthesis chemical methods for deposition of ZnO, CdO and CdZnO thin films to facilitate further research

B Amudhavalli, R Mariappan, M Prasath - Journal of Alloys and …, 2022 - Elsevier
Thin film materials have been used in semiconductor devices, wireless communications,
telecommunications, integrated circuits, rectifiers, transistors, solar cells, lightemitting …

Utilizing Gold Nanoparticle Decoration for Enhanced UV Photodetection in CdS Thin Films Fabricated by Pulsed Laser Deposition: Exploiting Plasmon-Induced …

W Belaid, SY Gezgin, MA Basyooni-M. Kabatas… - Nanomaterials, 2024 - mdpi.com
UV sensors hold significant promise for various applications in both military and civilian
domains. However, achieving exceptional detectivity, responsivity, and rapid rise/decay …

Investigation of n-ZnO/p-GaAs Heterojunction Solar Cell Using Two-Dimensional Numerical Simulation

M Manoua, T Jannane, K El-Hami, A Liba - JOM, 2023 - Springer
Abstract The n-ZnO/p-GaAs heterojunction is a promising structure to reach good conversion
efficiency owing to the important optical and electrical properties of both zinc oxide (ZnO) …

Influence of Mn doping on electrical properties of TiO2/Si heterojunction diode

S Baturay, O Bicer, S Yigit Gezgin, I Candan… - … für Naturforschung A, 2023 - degruyter.com
In this special work, two types of material, which are undoped and Mn doped TiO2 thin films,
have been produced by spin coating technique, and then their structural, morphological and …

[HTML][HTML] Cu2ZnSnS4/Bi2FeCrO6半导体异质结的脉冲激光沉积法制备及其光电性能

王杰, 马帅, 夏丰金, 董红周, 沙震宗, 贾瑞彬 - 材料工程, 2021 - html.rhhz.net
为充分发挥无机铁电氧化物双钙钛矿Bi 2 FeCrO 6 (BFCO) 的光电特性, 选择P
型半导体化合物Cu 2 ZnSnS 4 (CZTS) 作为空穴传输层与BFCO 结合, 构建半导体异质结 …

Experimental and Theoretical Investigation of Zr‐Doped CuO/Si Solar Cell

S Yigit Gezgin, Ş Baturay, C Ozaydin… - physica status solidi …, 2024 - Wiley Online Library
Copper oxide (CuO) is a nanostructured semiconductor material with the potential for solar
energy conversion and can be suitable for solar cells when used as a thin film. Herein …

Diode Property Of n-ZnO/p-Si Heterojunction Structure in the Dark and Illumination Condition

SY Gezgin, A Kepceoğlu, A Toprak… - Selçuk-Teknik …, 2018 - sutod.selcuk.edu.tr
Öz DIODE PROPERTY OF n-ZnO/p-Si HETEROJUNCTION STRUCTURE IN THE DARK
AND ILLUMINATION CONDITION Abstract In this study, Zinc Oxide (ZnO) thin film was …

Pulslu Laser Depozisyon (PLD) yöntemi ile üretilen FTO ve ZnO ince filmlerin morfolojik ve optik özellikleri

B Gezgin, SY Gezgin, A Kepceoğlu… - Selçuk-Teknik …, 2017 - sutod.selcuk.edu.tr
Öz PULSLU LASER DEPOZİSYON (PLD) YÖNTEMİ İLE ÜRETİLEN FTO ve ZnO İNCE
FİLMLERİN MORFOLOJİK VE OPTİK ÖZELLİKLERİ Özet Bu çalışmada, PLD tekniği ile oda …

Enhanced sensing performance of zinc oxide porous silicon heterojunction-based gas sensors

RK Hussain, AHA Al-Fouadi… - AIP Conference …, 2020 - pubs.aip.org
The structural properties ofZnO and ZnO: Al (2, 4, 6 and 8)%. Nanostructurethin films
deposited at 450oC on porous silicon (PS) substrates of p-type and n-type of porous were …

DIODE PROPERTY OF n-ZnO/p-Si HETEROJUNCTION STRUCTURE IN THE DARK AND ILLUMINATION CONDITION

A Toprak, Y Gündoğdu, HŞ Kılıç, A Kepçeoğlu… - 2018 - acikerisim.selcuk.edu.tr
Özet In this study, Zinc Oxide (ZnO) thin film was deposited on the Silicon (Si) wafer by
Pulsed Laser Deposition (PLD) to form n-ZnO/p-Si heterojunction. The morphological and …