Memristive Ion Dynamics to Enable Biorealistic Computing

R Zhao, SJ Kim, Y Xu, J Zhao, T Wang, R Midya… - Chemical …, 2024 - ACS Publications
Conventional artificial intelligence (AI) systems are facing bottlenecks due to the
fundamental mismatches between AI models, which rely on parallel, in-memory, and …

Two-Terminal MoS2 Memristor and the Homogeneous Integration with a MoS2 Transistor for Neural Networks

S Fu, JH Park, H Gao, T Zhang, X Ji, T Fu, L Sun… - Nano Letters, 2023 - ACS Publications
Memristors are promising candidates for constructing neural networks. However, their
dissimilar working mechanism to that of the addressing transistors can result in a scaling …

Recent progress in bio-voltage memristors working with ultralow voltage of biological amplitude

T Fu, S Fu, J Yao - Nanoscale, 2023 - pubs.rsc.org
Neuromorphic systems built from memristors that emulate bioelectrical information
processing in the brain may overcome the limitations of traditional computing architectures …

A Dynamic Memory for Reservoir Computing Utilizing Ion Migration in CuInP2S6

Y Wu, NT Duong, YC Chien, S Liu… - Advanced Electronic …, 2024 - Wiley Online Library
Time‐series analysis and forecasting play a vital role in the fields of economics and
engineering. Neuromorphic computing, particularly recurrent neural networks (RNNs), has …

Analog Ion‐Slicing LiNbO3 Memristor Based on Hopping Transport for Neuromorphic Computing

J Wang, H Zeng, Y Xie, Z Zhao, X Pan… - Advanced Intelligent …, 2023 - Wiley Online Library
Inspired by human brain, the emerging analog‐type memristor employed in neuromorphic
computing systems has attracted tremendous interest. However, existing analog memristors …

Ag/Ti/GeS/Ag Bidirectional Conductive-Bridge Selector with Low Turn-Off Latency, High Endurance, and Enhanced Switching Uniformity

A Ali, H Abbas, J Li, J Jung, DS Ang - ACS Applied Electronic …, 2024 - ACS Publications
To fulfill the demands of three-dimensional (3D) cross-point array architectures in embedded
memories, selectors with low voltage and low off current with high selectivity are imperative …

Mechanism for Local‐Atomic Structure Changes in Chalcogenide‐based Threshold‐Switching Devices

M Choi, HJ Sung, B Koo, JB Park, W Yang… - Advanced …, 2024 - Wiley Online Library
Threshold‐switching devices based on amorphous chalcogenides are considered for use as
selector devices in 3D crossbar memories. However, the fundamental understanding of …

Enabling reliable two-terminal memristor network by exploiting the dynamic reverse recovery in a diode selector

T Fu, S Fu, S Wang, J Yao - Device, 2024 - cell.com
The transistor is broadly used to address memristor networks, but its three-terminal structure
can impose limitations on fully exploiting the potential of efficient integration that a two …

Direct laser irradiation and modification of 2D Te for development of volatile memristor

G Wang, Y Guan, Y Wang, Y Ding, L Yang - Materials, 2023 - mdpi.com
Laser irradiation, as a kind of post-fabrication method for two-dimensional (2D) materials, is
a promising way to tune the properties of materials and the performance of corresponding …

Thermally robust HfNx-based bidirectional diode and its integration with RRAM for crossbar array application

HY Lee, JH Park, S Choi, BJ Choi - Applied Physics A, 2024 - Springer
High-density nonvolatile memories can be realized by fabricating resistive random-access
memories (RRAMs) as 4F2 (F: minimum feature size) cells in a crossbar array (CBA) …