Here, several classes of magneto-electric devices, and their possible implementations as
complementary metal-oxide-semiconductor (CMOS) replacements, are discussed. We …

Here, we outline magnetoelectric (ME) device concepts based on the voltage control of the
interface magnetism of an ME antiferromagnet gate dielectric formed on a very thin …

Electrically controllable antiferromagnets will play a prominent role in the development of
future spintronics. These materials offer a way to realize innovative low-energy …

As electronic integrated circuits are scaled to ever smaller sizes, they run into the obstacle of
excessive power dissipation. Spintronic devices hold the promise of alleviating this problem …

Evidence of robust spin‐dependent transport in monolayer graphene, deposited on the
(0001) surface of the antiferromagnetic (AFM)/magneto‐electric oxide chromia (Cr2O3), is …

Introducing magnetism in two-dimensional materials is of particular importance for both
fundamental research and practical applications in nanoscale spintronics. Herein, we report …

Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which
involves the topological electronic states coupled to the AFM order parameter known as the …

This work presents a simplified analytical model of ap‐n junction diode based on a
graphene nanoribbon (GNR) and a unique type of Schottky diode based on metallic …

A series of chromium oxides (Cr 2 O 3) nanoparticles supported on different carbonaceous
material, namely: graphene, graphene oxide (GO) and graphite, were synthetized by …

Magnetic two-dimensional materials have attracted considerable attention for their
significant potential application in spintronics. Here, we systematically study the electronic …