Historically, the physics, energy spectrum, and wave functions of superlattices have had
different levels of understanding. Unlike the standard approaches, based on theorems for …

Laser performance of several InGaN quantum-well (QW) lasers with an emission
wavelength of 392-461 nm are numerically studied with a LASTIP simulation program …

GaN/InGaN pin solar cells with N-face are simulated. In contrast to the detrimental effect of
normal polarization, the internal electric field induced by reversed polarization enhances the …

The characteristics of the violet–blue InGaN quantum-well lasers with an emission
wavelength of 400–480 nm when the band-offset ratio of the InxGa1− xN/InyGa1− yN …

Using a simple approach that requires neither the Bloch functions nor the reciprocal lattice,
new, compact, and rigorous analytical formulas are derived for an accurate evaluation of …

The optical properties of blue InGaN LEDs that emit in a spectral range from 410 to 445 nm
are theoretically investigated by using the APSYS simulation program. It is found that the …

Using the analytical expressions for the genuine eigenfunctions φ μ ν (z) and eigenvalues E
μ, ν, of open, bounded and quasi-bounded finite periodic systems, we derive the …

We have examined in detail crystal orientation effects on the properties of excitonic emission
from wurtzite In x Ga 1− x N/GaN quantum wells (QWs) with piezoelectric polarization using …

We have examined in detail the optical properties and carrier capture dynamics of coupled
In x Ga 1− x N∕ Ga N multiple and single quantum well (MQW and SQW) structures that …

A design parameter subspace is explored to suggest epitaxial layer structures which
maximize gain spectral density at a target wavelength for green In¿ Ga 1-¿ N-based single …