This article discusses the key challenges and the recent breakthroughs in realizing high-
quality indium (In)-rich indium gallium nitride (InGaN) epilayers and InGaN/GaN multiple …

Indium nitride (InN) is a low-band-gap semiconductor with unusually high electron mobility,
making it suitable for IR-range optoelectronics and high-frequency transistors. However, the …

Abstract 2D semiconductor materials with layered crystal structures have attracted great
interest as promising candidates for electronic, optoelectronic, and sensor applications due …

The fabrication of high‐speed electronic and communication devices has rapidly grown the
demand for high mobility semiconductors. However, their high cost and complex fabrication …

In this work, we have studied the role varying nitrogen plasma compositions play in the low-
temperature plasma-assisted growth of indium nitride (InN) thin films. Films were deposited …

Group III nitride semiconductors are used for optical, high-frequency electronic, and power
devices. In particular, indium nitride (InN) and In-rich indium gallium nitride (InGaN) are …

Epitaxial nanometer-thin indium nitride (InN) films are considered promising active layers in
various device applications but remain challenging to deposit. We compare the …

To examine the application of plasma-induced metalorganic chemical vapor deposition
(MOCVD) toward the epitaxial growth of III-V nitride semiconductors, a GaN surface exposed …

A numerical model is built to understand the transport phenomenon during the pulsed
MOCVD process. The relations between the transport behavior of the precursors and the …

Indium nitride (InN) has attracted much attention due to its high electron mobility and peak
electron velocity, which make it suitable for fabrication of high-speed electronic devices. In …