An overview over issues and findings in SiC power MOSFET reliability is given. The focus of
this article is on threshold instabilities and the differences to Si power MOSFETs …

Based on the established properties of the most commonly observed defect in amorphous
oxides, the E'center, we suggest a coupled two-stage model to explain the negative bias …

Threshold voltage () hysteresis affects the reliability of silicon carbide (SiC) MOSFETs. To
evaluate the hysteresis effect on switching characteristics, this article first investigates the …

Based on the vast perusal, an overview on the negative bias temperature instability (NBTI)
effect in metal oxide semiconductor (MOS) devices, from different perspectives as well as …

Front-end-of-line reliability issues such as Bias Temperature Instability (BTI), Hot Carrier
Injection (HCI), and Time Dependent Dielectric Breakdown (TDDB) have become more …

Very fast transients of shift and their impact on under dynamic AC (1 k–1 MHz) positive gate
stress in depletion-mode (D-mode) metal–insulator–semiconductor high-electron-mobility …

Conducting negative bias temperature instability (NBTI) stress/recovery experiments on n-
type metal-oxide-semiconductor-field-effect-transistors (n-MOSFETs), we have been able to …

In LEO (Low Earth Orbit) satellite communication system, the orbit height of the satellite is
low, the transmission delay is short, the path loss is small, and the frequency multiplexing is …

With technology scaling, the deviation between predicted path delay using simulation and
actual path delay on silicon increases due to process variation and aging. Hence, on-chip …

Negative Bias Temperature Instability (NBTI) is due to interface trap generation (ΔN IT) and
trapping of holes in gate insulator traps (ΔN HT). However, the isolation methods and the …