Thermal budget limits of quarter-micrometer foundry CMOS for post-processing MEMS devices

H Takeuchi, A Wung, X Sun, RT Howe… - IEEE transactions on …, 2005 - ieeexplore.ieee.org
Thermal budget limits for low stand-by power (LSP), 0.25/spl mu/m foundry CMOS devices
have been investigated, in order to assess the impact of post-processing …

Compensation of the Stress Gradient in Physical Vapor Deposited Al1−xScxN Films for Microelectromechanical Systems with Low Out-of-Plane Bending

R Beaucejour, M D'Agati, K Kalyan, RH Olsson III - Micromachines, 2022 - mdpi.com
Thin film through-thickness stress gradients produce out-of-plane bending in released
microelectromechanical systems (MEMS) structures. We study the stress and stress gradient …

SiGe/h-BN heterostructure with inspired electronic and optical properties: a first-principles study

X Chen, X Sun, DG Yang, R Meng, C Tan… - Journal of Materials …, 2016 - pubs.rsc.org
The structure along with the electronic and optical properties of a SiGe/BN monolayer
heterostructure were theoretically researched using density functional theory calculations …

Pulsed laser ablation of Germanium under vacuum and hydrogen environments at various fluences

MH Iqbal, S Bashir, MS Rafique, A Dawood… - Applied Surface …, 2015 - Elsevier
Laser fluence and ambient environment play a significant role for the formation and
development of the micro/nano-structures on the laser irradiated targets. Single crystal (1 0 …

Simultaneous enhancement of electrical conductivity, uniformity, and near-infrared transmittance via laser annealing on ZnO: Ga films deposited by atmospheric …

YC Chen, PC Hsu, L Xu, JY Juang - Journal of Alloys and Compounds, 2021 - Elsevier
Atmospheric pressure plasma jet (APPJ) has been used to deposit transparent conductive
oxides (TCO) in ambient conditions with optoelectronic properties comparable to vacuum …

Characterization of polycrystalline silicon-germanium film deposition for modularly integrated MEMS applications

CW Low, TJK Liu, RT Howe - Journal of …, 2007 - ieeexplore.ieee.org
The deposition of in situ boron-doped polycrystalline silicon-germanium (poly-SiGe) films in
a conventional low-pressure chemical-vapor deposition reactor has been characterized …

Energy reversible switching from amorphous metal based nanoelectromechanical switch

A Mayet, CE Smith, MM Hussain - 2013 13th IEEE International …, 2013 - ieeexplore.ieee.org
We report observation of energy reversible switching from amorphous metal based
nanoelectromechanical (NEM) switch. For ultra-low power electronics, NEM switches can be …

Effect of pulsed laser irradiation on microstructure and evolution of residual stress for gold film

S Zhou, W Wu, X Huang, T Shao… - Advanced Engineering …, 2023 - Wiley Online Library
Gold film is extensively used in a variety of electronic, optical, and magnetic instruments or
devices. Effect of pulsed laser irradiation on microstructure and evolution of residual stress …

Characterization of KrF excimer laser annealed PECVD SixGe1− x for MEMS post-processing

S Sedky, M Gromova, T Van der Donck, JP Celis… - Sensors and Actuators A …, 2006 - Elsevier
This work studies the possibility to treat plasma enhanced chemical vapor deposited
(PECVD) silicon germanium (Si1− xGex) thin films grown at 400° C or lower with a pulsed …

The coupling effect of interfacial adhesion and tensile residual stress on a thin membrane adhered to a flat punch

K Wan, L Kogut - Journal of Micromechanics and …, 2005 - iopscience.iop.org
Adhesion and residual stress play a critical role in the performance and reliability of
microdevices, in particular, the cross bridge of RF microswitches. To investigate their …